NSB1706DMW5T1G Specs and Replacement

Type Designator: NSB1706DMW5T1G

SMD Transistor Code: U6

Material of Transistor: Si

Polarity: Pre-Biased-NPN

Built in Bias Resistor R1 = 4.7 kOhm

Built in Bias Resistor R2 = 47 kOhm

Typical Resistor Ratio R1/R2 = 0.1

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.26 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 80

Noise Figure, dB: -

Package: SOT353

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NSB1706DMW5T1G datasheet

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NSB1706DMW5T1G

NSB1706DMW5T1G Dual Bias Resistor Transistor NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The Bias Resistor Transistor (BRT) contains a single transistor with http //onsemi.com a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. These digital transistors are designed to replace a single device and its... See More ⇒

 1.1. Size:117K  onsemi

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NSB1706DMW5T1G

NSB1706DMW5T1G Dual Bias Resistor Transistor NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The Bias Resistor Transistor (BRT) contains a single transistor with http //onsemi.com a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. These digital transistors are designed to replace a single device and its... See More ⇒

Detailed specifications: NSBA123JDXV6, NSBA123JDXV6T5G, NSBA123JF3, NSBA123JF3T5G, NSBA123TDP6, NSBA123TDP6T5G, NSBA123TF3, NSBA123TF3T5G, TIP41, NSB4904DW1T1G, NSB9435T1G, NSBA124EDP6, NSBA124EDP6T5G, NSBA124EDXV6, NSBA124EDXV6T1G, NSBA124EF3, NSBA124EF3T5G

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