All Transistors. NSB1706DMW5T1G Datasheet

 

NSB1706DMW5T1G Datasheet and Replacement


   Type Designator: NSB1706DMW5T1G
   SMD Transistor Code: U6
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 4.7 kOhm
   Built in Bias Resistor R2 = 47 kOhm
   Typical Resistor Ratio R1/R2 = 0.1
   Maximum Collector Power Dissipation (Pc): 0.26 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 80
   Noise Figure, dB: -
   Package: SOT353
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NSB1706DMW5T1G Datasheet (PDF)

 ..1. Size:113K  onsemi
 nsb1706dmw5t1g.pdf pdf_icon

NSB1706DMW5T1G

NSB1706DMW5T1GDual Bias ResistorTransistorNPN Silicon Surface Mount Transistorswith Monolithic Bias Resistor NetworkThe Bias Resistor Transistor (BRT) contains a single transistor withhttp://onsemi.coma monolithic bias network consisting of two resistors; a series baseresistor and a base-emitter resistor. These digital transistors aredesigned to replace a single device and its

 1.1. Size:117K  onsemi
 nsb1706dmw5t1-d.pdf pdf_icon

NSB1706DMW5T1G

NSB1706DMW5T1GDual Bias ResistorTransistorNPN Silicon Surface Mount Transistorswith Monolithic Bias Resistor NetworkThe Bias Resistor Transistor (BRT) contains a single transistor withhttp://onsemi.coma monolithic bias network consisting of two resistors; a series baseresistor and a base-emitter resistor. These digital transistors aredesigned to replace a single device and its

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: ESM2060 | CMBT847G | DTA123EET1G | 3DD4617H | MP602 | 2N655 | 2SC3636

Keywords - NSB1706DMW5T1G transistor datasheet

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