NSB9435T1G Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NSB9435T1G

Código: 9435R

Material: Si

Polaridad de transistor: Pre-Biased-PNP

Resistencia Base-Emisor R2 = 10 kOhm

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 1.56 W

Tensión colector-base (Vcb): 45 V

Tensión colector-emisor (Vce): 30 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 3 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 110 MHz

Capacitancia de salida (Cc): 100 pF

Ganancia de corriente contínua (hFE): 90

Encapsulados: SOT223

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NSB9435T1G datasheet

 ..1. Size:219K  onsemi
 nsb9435t1g nsv9435t1g.pdf pdf_icon

NSB9435T1G

NSB9435T1G, NSV9435T1G High Current Bias Resistor Transistor PNP Silicon http //onsemi.com Features Collector -Emitter Sustaining Voltage - POWER BJT VCEO(sus) = 30 Vdc (Min) @ IC = 10 mAdc IC = 3.0 AMPERES High DC Current Gain - BVCEO = 30 VOLTS hFE = 125 (Min) @ IC = 0.8 Adc VCE(sat) = 0.275 VOLTS = 90 (Min) @ IC = 3.0 Adc Low Collector -Emitter Saturation Voltag

 ..2. Size:143K  onsemi
 nsb9435t1g.pdf pdf_icon

NSB9435T1G

NSB9435T1G, NSV9435T1G High Current Bias Resistor Transistor PNP Silicon http //onsemi.com Features Collector -Emitter Sustaining Voltage - POWER BJT VCEO(sus) = 30 Vdc (Min) @ IC = 10 mAdc IC = 3.0 AMPERES High DC Current Gain - BVCEO = 30 VOLTS hFE = 125 (Min) @ IC = 0.8 Adc VCE(sat) = 0.275 VOLTS = 90 (Min) @ IC = 3.0 Adc Low Collector -Emitter Saturation Voltag

 5.1. Size:112K  onsemi
 nsb9435t1-d.pdf pdf_icon

NSB9435T1G

NSB9435T1G High Current Bias Resistor Transistor PNP Silicon Features http //onsemi.com Collector -Emitter Sustaining Voltage - VCEO(sus) = 30 Vdc (Min) @ IC = 10 mAdc POWER BJT High DC Current Gain - IC = 3.0 AMPERES hFE = 125 (Min) @ IC = 0.8 Adc BVCEO = 30 VOLTS = 90 (Min) @ IC = 3.0 Adc VCE(sat) = 0.275 VOLTS Low Collector -Emitter Saturation Voltage - VCE(sat

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