NSB9435T1G Todos los transistores

 

NSB9435T1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NSB9435T1G
   Código: 9435R
   Material: Si
   Polaridad de transistor: Pre-Biased-PNP
   Resistencia Base-Emisor R2 = 10 kOhm

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 1.56 W
   Tensión colector-base (Vcb): 45 V
   Tensión colector-emisor (Vce): 30 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 3 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 110 MHz
   Capacitancia de salida (Cc): 100 pF
   Ganancia de corriente contínua (hfe): 90
   Paquete / Cubierta: SOT223
 

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NSB9435T1G Datasheet (PDF)

 ..1. Size:219K  onsemi
 nsb9435t1g nsv9435t1g.pdf pdf_icon

NSB9435T1G

NSB9435T1G,NSV9435T1GHigh Current Bias ResistorTransistorPNP Siliconhttp://onsemi.comFeatures Collector -Emitter Sustaining Voltage - POWER BJTVCEO(sus) = 30 Vdc (Min) @ IC = 10 mAdcIC = 3.0 AMPERES High DC Current Gain - BVCEO = 30 VOLTShFE = 125 (Min) @ IC = 0.8 AdcVCE(sat) = 0.275 VOLTS= 90 (Min) @ IC = 3.0 Adc Low Collector -Emitter Saturation Voltag

 ..2. Size:143K  onsemi
 nsb9435t1g.pdf pdf_icon

NSB9435T1G

NSB9435T1G,NSV9435T1GHigh Current Bias ResistorTransistorPNP Siliconhttp://onsemi.comFeatures Collector -Emitter Sustaining Voltage - POWER BJTVCEO(sus) = 30 Vdc (Min) @ IC = 10 mAdcIC = 3.0 AMPERES High DC Current Gain - BVCEO = 30 VOLTShFE = 125 (Min) @ IC = 0.8 AdcVCE(sat) = 0.275 VOLTS= 90 (Min) @ IC = 3.0 Adc Low Collector -Emitter Saturation Voltag

 5.1. Size:112K  onsemi
 nsb9435t1-d.pdf pdf_icon

NSB9435T1G

NSB9435T1GHigh Current Bias ResistorTransistorPNP SiliconFeatureshttp://onsemi.com Collector -Emitter Sustaining Voltage - VCEO(sus) = 30 Vdc (Min) @ IC = 10 mAdcPOWER BJT High DC Current Gain - IC = 3.0 AMPEREShFE = 125 (Min) @ IC = 0.8 AdcBVCEO = 30 VOLTS= 90 (Min) @ IC = 3.0 AdcVCE(sat) = 0.275 VOLTS Low Collector -Emitter Saturation Voltage - VCE(sat

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