All Transistors. NSB9435T1G Datasheet

 

NSB9435T1G Transistor. Datasheet pdf. Equivalent

Type Designator: NSB9435T1G

Marking Code: 9435R

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 1.56 W

Maximum Collector-Base Voltage |Vcb|: 45 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 110 MHz

Collector Capacitance (Cc): 100 pF

Forward Current Transfer Ratio (hFE), MIN: 90

Noise Figure, dB: -

Package: SOT223

NSB9435T1G Transistor Equivalent Substitute - Cross-Reference Search

NSB9435T1G Datasheet (PDF)

1.1. nsb9435t1g.pdf Size:143K _update

NSB9435T1G
NSB9435T1G

NSB9435T1G, NSV9435T1G High Current Bias Resistor Transistor PNP Silicon http://onsemi.com Features  Collector -Emitter Sustaining Voltage - POWER BJT VCEO(sus) = 30 Vdc (Min) @ IC = 10 mAdc IC = 3.0 AMPERES  High DC Current Gain - BVCEO = 30 VOLTS hFE = 125 (Min) @ IC = 0.8 Adc VCE(sat) = 0.275 VOLTS = 90 (Min) @ IC = 3.0 Adc  Low Collector -Emitter Saturation Voltag

1.2. nsb9435t1-d.pdf Size:112K _onsemi

NSB9435T1G
NSB9435T1G

NSB9435T1G High Current Bias Resistor Transistor PNP Silicon Features http://onsemi.com Collector -Emitter Sustaining Voltage - VCEO(sus) = 30 Vdc (Min) @ IC = 10 mAdc POWER BJT High DC Current Gain - IC = 3.0 AMPERES hFE = 125 (Min) @ IC = 0.8 Adc BVCEO = 30 VOLTS = 90 (Min) @ IC = 3.0 Adc VCE(sat) = 0.275 VOLTS Low Collector -Emitter Saturation Voltage - VCE(sat) = 0.275

Datasheet: NSBA123JF3 , NSBA123JF3T5G , NSBA123TDP6 , NSBA123TDP6T5G , NSBA123TF3 , NSBA123TF3T5G , NSB1706DMW5T1G , NSB4904DW1T1G , S9014 , NSBA124EDP6 , NSBA124EDP6T5G , NSBA124EDXV6 , NSBA124EDXV6T1G , NSBA124EF3 , NSBA124EF3T5G , NSBA124XDXV6 , NSBA124XDXV6T1G .

 


NSB9435T1G
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