NSB9435T1G Datasheet, Equivalent, Cross Reference Search
Type Designator: NSB9435T1G
SMD Transistor Code: 9435R
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R2 = 10 kOhm
Maximum Collector Power Dissipation (Pc): 1.56 W
Maximum Collector-Base Voltage |Vcb|: 45 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 110 MHz
Collector Capacitance (Cc): 100 pF
Forward Current Transfer Ratio (hFE), MIN: 90
Noise Figure, dB: -
Package: SOT223
NSB9435T1G Transistor Equivalent Substitute - Cross-Reference Search
NSB9435T1G Datasheet (PDF)
nsb9435t1g nsv9435t1g.pdf
NSB9435T1G,NSV9435T1GHigh Current Bias ResistorTransistorPNP Siliconhttp://onsemi.comFeatures Collector -Emitter Sustaining Voltage - POWER BJTVCEO(sus) = 30 Vdc (Min) @ IC = 10 mAdcIC = 3.0 AMPERES High DC Current Gain - BVCEO = 30 VOLTShFE = 125 (Min) @ IC = 0.8 AdcVCE(sat) = 0.275 VOLTS= 90 (Min) @ IC = 3.0 Adc Low Collector -Emitter Saturation Voltag
nsb9435t1g.pdf
NSB9435T1G,NSV9435T1GHigh Current Bias ResistorTransistorPNP Siliconhttp://onsemi.comFeatures Collector -Emitter Sustaining Voltage - POWER BJTVCEO(sus) = 30 Vdc (Min) @ IC = 10 mAdcIC = 3.0 AMPERES High DC Current Gain - BVCEO = 30 VOLTShFE = 125 (Min) @ IC = 0.8 AdcVCE(sat) = 0.275 VOLTS= 90 (Min) @ IC = 3.0 Adc Low Collector -Emitter Saturation Voltag
nsb9435t1-d.pdf
NSB9435T1GHigh Current Bias ResistorTransistorPNP SiliconFeatureshttp://onsemi.com Collector -Emitter Sustaining Voltage - VCEO(sus) = 30 Vdc (Min) @ IC = 10 mAdcPOWER BJT High DC Current Gain - IC = 3.0 AMPEREShFE = 125 (Min) @ IC = 0.8 AdcBVCEO = 30 VOLTS= 90 (Min) @ IC = 3.0 AdcVCE(sat) = 0.275 VOLTS Low Collector -Emitter Saturation Voltage - VCE(sat
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
