NSS12500UW3T2G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NSS12500UW3T2G
Código: VE
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 1.5 W
Tensión colector-base (Vcb): 12 V
Tensión colector-emisor (Vce): 12 V
Tensión emisor-base (Veb): 7 V
Corriente del colector DC máxima (Ic): 5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 100 MHz
Capacitancia de salida (Cc): 210 pF
Ganancia de corriente contínua (hfe): 250
Paquete / Cubierta: WDFN3
Búsqueda de reemplazo de NSS12500UW3T2G
NSS12500UW3T2G Datasheet (PDF)
nss12500uw3t2g.pdf
NSS12500UW3T2G12 V, 8.0 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesehttp://onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is impor
nss12500uw3.pdf
NSS12500UW3T2G12 V, 8.0 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesehttp://onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is impor
nss12501uw3-d.pdf
NSS12501UW3T2G12 V, 7.0 A, Low VCE(sat)NPN TransistorON Semiconductor's e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Theseare designed for use in low voltage, high speed switching applicationshttp://onsemi.comwhere affordable efficient energy control is importa
nss12501uw3t2g.pdf
NSS12501UW3T2G12 V, 7.0 A, Low VCE(sat)NPN TransistorON Semiconductor's e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Theseare designed for use in low voltage, high speed switching applicationshttp://onsemi.comwhere affordable efficient energy control is importa
Otros transistores... NSVMMUN2135LT1G , NSVMMUN2212LT1G , NSVMMUN2217LT1G , NSVMMUN2230LT1G , NSVMMUN2232LT1G , NSVMMUN2232LT3G , NSVMMUN2233LT3G , NSVMMUN2235LT1G , 2SC2383Y , NSS12501UW3T2G , NSS12601CF8T1G , NSS1C200MZ4T1G , NSS1C200MZ4T3G , NSS1C201L , NSS1C201MZ4 , NSS1C201MZ4T3G , NSS1C300E .
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
Popular searches
c5200 2sc5200 transistor datasheet | d2390 datasheet | 2sa750 replacement | 2sc984 replacement | a1046 transistor | hy19p03 | 2sk2749 | c2577 transistor