All Transistors. NSS12500UW3T2G Datasheet

 

NSS12500UW3T2G Datasheet and Replacement


   Type Designator: NSS12500UW3T2G
   SMD Transistor Code: VE
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 1.5 W
   Maximum Collector-Base Voltage |Vcb|: 12 V
   Maximum Collector-Emitter Voltage |Vce|: 12 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 210 pF
   Forward Current Transfer Ratio (hFE), MIN: 250
   Noise Figure, dB: -
   Package: WDFN3
 

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NSS12500UW3T2G Datasheet (PDF)

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NSS12500UW3T2G

NSS12500UW3T2G12 V, 8.0 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesehttp://onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is impor

 3.1. Size:108K  onsemi
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NSS12500UW3T2G

NSS12500UW3T2G12 V, 8.0 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesehttp://onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is impor

 7.1. Size:82K  onsemi
nss12501uw3-d.pdf pdf_icon

NSS12500UW3T2G

NSS12501UW3T2G12 V, 7.0 A, Low VCE(sat)NPN TransistorON Semiconductor's e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Theseare designed for use in low voltage, high speed switching applicationshttp://onsemi.comwhere affordable efficient energy control is importa

 7.2. Size:138K  onsemi
nss12501uw3t2g.pdf pdf_icon

NSS12500UW3T2G

NSS12501UW3T2G12 V, 7.0 A, Low VCE(sat)NPN TransistorON Semiconductor's e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Theseare designed for use in low voltage, high speed switching applicationshttp://onsemi.comwhere affordable efficient energy control is importa

Datasheet: NSVMMUN2135LT1G , NSVMMUN2212LT1G , NSVMMUN2217LT1G , NSVMMUN2230LT1G , NSVMMUN2232LT1G , NSVMMUN2232LT3G , NSVMMUN2233LT3G , NSVMMUN2235LT1G , 2SC2383Y , NSS12501UW3T2G , NSS12601CF8T1G , NSS1C200MZ4T1G , NSS1C200MZ4T3G , NSS1C201L , NSS1C201MZ4 , NSS1C201MZ4T3G , NSS1C300E .

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