NSS1C300ET4G Todos los transistores

 

NSS1C300ET4G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NSS1C300ET4G
   Código: 1C30E
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 12.5 W
   Tensión colector-base (Vcb): 140 V
   Tensión colector-emisor (Vce): 100 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 3 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 100 MHz
   Capacitancia de salida (Cc): 60 pF
   Ganancia de corriente contínua (hfe): 120
   Paquete / Cubierta: TO252
 

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NSS1C300ET4G Datasheet (PDF)

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NSS1C300ET4G

NSS1C300ET4G100 V, 3.0 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are surface mount devices featuring ultra low saturationvoltage (VCE(sat)) and high current gain capability. These are designedwww.onsemi.comfor use in low voltage, high speed switching applications whereaffordable efficient energy control is important.Typical

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NSS1C300ET4G

NSS1C300ET4G100 V, 3.0 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are surface mount devices featuring ultra low saturationvoltage (VCE(sat)) and high current gain capability. These are designedhttp://onsemi.comfor use in low voltage, high speed switching applications whereaffordable efficient energy control is important.Typi

 7.1. Size:160K  onsemi
 nss1c301et4g.pdf pdf_icon

NSS1C300ET4G

NSS1C301ET4G100 V, 3.0 A, Low VCE(sat)NPN TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are surface mount devices featuring ultra low saturationvoltage (VCE(sat)) and high current gain capability. These are designedfor use in low voltage, high speed switching applications wherewww.onsemi.comaffordable efficient energy control is important.Typical

 7.2. Size:114K  onsemi
 nss1c301e.pdf pdf_icon

NSS1C300ET4G

NSS1C301ET4G100 V, 3.0 A, Low VCE(sat)NPN TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are surface mount devices featuring ultra low saturationvoltage (VCE(sat)) and high current gain capability. These are designedfor use in low voltage, high speed switching applications wherehttp://onsemi.comaffordable efficient energy control is important.Typi

MOSTRAR MÁS

Otros transistores... NSS12501UW3T2G , NSS12601CF8T1G , NSS1C200MZ4T1G , NSS1C200MZ4T3G , NSS1C201L , NSS1C201MZ4 , NSS1C201MZ4T3G , NSS1C300E , 2SA1015 , NSS1C301E , NSS1C301ET4G , NSVMMBT2222ATT1G , NSVMMBT2907AWT1G , NSVMMBT5087LT1G , NSVMMBT5087LT3G , NSVMMBT5088LT3G , NSVMMBT5401LT3G .

 

 
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