NSS1C300ET4G Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NSS1C300ET4G

Código: 1C30E

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 12.5 W

Tensión colector-base (Vcb): 140 V

Tensión colector-emisor (Vce): 100 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 3 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 100 MHz

Capacitancia de salida (Cc): 60 pF

Ganancia de corriente contínua (hFE): 120

Encapsulados: TO252

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NSS1C300ET4G datasheet

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 nss1c300et4g.pdf pdf_icon

NSS1C300ET4G

NSS1C300ET4G 100 V, 3.0 A, Low VCE(sat) PNP Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed www.onsemi.com for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical

 5.1. Size:105K  onsemi
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NSS1C300ET4G

NSS1C300ET4G 100 V, 3.0 A, Low VCE(sat) PNP Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed http //onsemi.com for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typi

 7.1. Size:160K  onsemi
 nss1c301et4g.pdf pdf_icon

NSS1C300ET4G

NSS1C301ET4G 100 V, 3.0 A, Low VCE(sat) NPN Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where www.onsemi.com affordable efficient energy control is important. Typical

 7.2. Size:114K  onsemi
 nss1c301e.pdf pdf_icon

NSS1C300ET4G

NSS1C301ET4G 100 V, 3.0 A, Low VCE(sat) NPN Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where http //onsemi.com affordable efficient energy control is important. Typi

MOSTRAR MÁS

Otros transistores... NSS12501UW3T2G, NSS12601CF8T1G, NSS1C200MZ4T1G, NSS1C200MZ4T3G, NSS1C201L, NSS1C201MZ4, NSS1C201MZ4T3G, NSS1C300E, BC639, NSS1C301E, NSS1C301ET4G, NSVMMBT2222ATT1G, NSVMMBT2907AWT1G, NSVMMBT5087LT1G, NSVMMBT5087LT3G, NSVMMBT5088LT3G, NSVMMBT5401LT3G