NSS1C300ET4G Datasheet, Equivalent, Cross Reference Search
Type Designator: NSS1C300ET4G
SMD Transistor Code: 1C30E
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 12.5 W
Maximum Collector-Base Voltage |Vcb|: 140 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 60 pF
Forward Current Transfer Ratio (hFE), MIN: 120
Noise Figure, dB: -
Package: TO252
NSS1C300ET4G Transistor Equivalent Substitute - Cross-Reference Search
NSS1C300ET4G Datasheet (PDF)
nss1c300et4g.pdf
NSS1C300ET4G100 V, 3.0 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are surface mount devices featuring ultra low saturationvoltage (VCE(sat)) and high current gain capability. These are designedwww.onsemi.comfor use in low voltage, high speed switching applications whereaffordable efficient energy control is important.Typical
nss1c300e.pdf
NSS1C300ET4G100 V, 3.0 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are surface mount devices featuring ultra low saturationvoltage (VCE(sat)) and high current gain capability. These are designedhttp://onsemi.comfor use in low voltage, high speed switching applications whereaffordable efficient energy control is important.Typi
nss1c301et4g.pdf
NSS1C301ET4G100 V, 3.0 A, Low VCE(sat)NPN TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are surface mount devices featuring ultra low saturationvoltage (VCE(sat)) and high current gain capability. These are designedfor use in low voltage, high speed switching applications wherewww.onsemi.comaffordable efficient energy control is important.Typical
nss1c301e.pdf
NSS1C301ET4G100 V, 3.0 A, Low VCE(sat)NPN TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are surface mount devices featuring ultra low saturationvoltage (VCE(sat)) and high current gain capability. These are designedfor use in low voltage, high speed switching applications wherehttp://onsemi.comaffordable efficient energy control is important.Typi
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: 2S120 | NSS12601CF8
History: 2S120 | NSS12601CF8
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