NSVMMBTH10LT1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NSVMMBTH10LT1G
Código: 3EM
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.23 W
Tensión colector-base (Vcb): 30 V
Tensión colector-emisor (Vce): 25 V
Tensión emisor-base (Veb): 3 V
Corriente del colector DC máxima (Ic): 0.04 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 650 MHz
Capacitancia de salida (Cc): 0.7 pF
Ganancia de corriente contínua (hfe): 60
Paquete / Cubierta: SOT23
Búsqueda de reemplazo de transistor bipolar NSVMMBTH10LT1G
NSVMMBTH10LT1G Datasheet (PDF)
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