NSVMMBTH10LT1G Todos los transistores

 

NSVMMBTH10LT1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NSVMMBTH10LT1G
   Código: 3EM
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.23 W
   Tensión colector-base (Vcb): 30 V
   Tensión colector-emisor (Vce): 25 V
   Tensión emisor-base (Veb): 3 V
   Corriente del colector DC máxima (Ic): 0.04 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 650 MHz
   Capacitancia de salida (Cc): 0.7 pF
   Ganancia de corriente contínua (hfe): 60
   Paquete / Cubierta: SOT23

 Búsqueda de reemplazo de transistor bipolar NSVMMBTH10LT1G

 

NSVMMBTH10LT1G Datasheet (PDF)

 ..1. Size:151K  onsemi
mmbth10lt1g mmbth10-04lt1g nsvmmbth10lt1g.pdf

NSVMMBTH10LT1G
NSVMMBTH10LT1G

MMBTH10L,MMBTH10-4L,SMMBTH10-4L,NSVMMBTH10LVHF/UHF Transistorwww.onsemi.comNPN SiliconFeatures S and NSV Prefixes for Automotive and Other ApplicationsSOT-23 (TO-236)Requiring Unique Site and Control Change Requirements;CASE 318AEC-Q101 Qualified and PPAP CapableSTYLE 6 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCOLLECTORCompliant31M

 ..2. Size:204K  onsemi
mmbth10lt1g nsvmmbth10lt1g mmbth10-04lt1g.pdf

NSVMMBTH10LT1G
NSVMMBTH10LT1G

ON SemiconductorIs NowTo learn more about onsemi, please visit our website at www.onsemi.comonsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,

 ..3. Size:102K  onsemi
nsvmmbth10lt1g.pdf

NSVMMBTH10LT1G
NSVMMBTH10LT1G

MMBTH10LT1G,NSVMMBTH10LT1G,MMBTH10LT3G,MMBTH10-4LT1GVHF/UHF Transistorhttp://onsemi.comNPN SiliconFeatures AEC-Q101 Qualified and PPAP CapableSOT-23 (TO-236) NSV Prefix for Automotive and Other Applications RequiringCASE 318Unique Site and Control Change Requirements STYLE 6 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCOLLECTORCompliant*

 3.1. Size:91K  onsemi
mmbth10l mmbth10-4l smmbth10-4l nsvmmbth10l.pdf

NSVMMBTH10LT1G
NSVMMBTH10LT1G

MMBTH10L,MMBTH10-4L,SMMBTH10-4L,NSVMMBTH10LVHF/UHF Transistorwww.onsemi.comNPN SiliconFeatures S and NSV Prefixes for Automotive and Other ApplicationsSOT-23 (TO-236)Requiring Unique Site and Control Change Requirements;CASE 318AEC-Q101 Qualified and PPAP CapableSTYLE 6 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCOLLECTORCompliant31M

 7.1. Size:82K  onsemi
nsvmmbt5088lt3g.pdf

NSVMMBTH10LT1G
NSVMMBTH10LT1G

MMBT5088L, MMBT5089LLow Noise TransistorsNPN SiliconFeatures S and NSV Prefix for Automotive and Other Applications Requiringhttp://onsemi.comUnique Site and Control Change Requirements; AEC-Q101Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant*SOT-23 (TO-236)CASE 318MAXIMUM RATINGSSTYLE 6Rating Symbol Value Unit

 7.2. Size:125K  onsemi
nsvmmbt5401lt3g.pdf

NSVMMBTH10LT1G
NSVMMBTH10LT1G

MMBT5401L, SMMBT5401L,NSVMMBT5401LHigh Voltage TransistorPNP Siliconhttp://onsemi.comFeatures S and NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC-Q101Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSSOT-23 (TO-236)CompliantCASE 318STYLE 6MAXIMUM RATINGSCOLLECTO

 7.3. Size:76K  onsemi
nsvmmbt5401wt1g.pdf

NSVMMBTH10LT1G
NSVMMBTH10LT1G

MMBT5401WHigh Voltage TransistorPNP SiliconFeatures NSV Prefix for Automotive and Other Applications Requiringwww.onsemi.comUnique Site and Control Change Requirements; AEC-Q101Qualified and PPAP Capable COLLECTOR3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant1BASEMAXIMUM RATINGSRating Symbol Value Unit2EMITTERCollector-Emitter Vo

 7.4. Size:123K  onsemi
nsvmmbt6520lt1g.pdf

NSVMMBTH10LT1G
NSVMMBTH10LT1G

MMBT6520L,NSVMMBT6520LHigh Voltage TransistorPNP Siliconhttp://onsemi.comFeatures NSV Prefix for Automotive and Other Applications RequiringCOLLECTORUnique Site and Control Change Requirements; AEC-Q1013Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1BASECompliant2EMITTERMAXIMUM RATINGSRating Symbol Value UnitC

 7.5. Size:144K  onsemi
nsvmmbt589lt1g.pdf

NSVMMBTH10LT1G
NSVMMBTH10LT1G

MMBT589LT1G,NSVMMBT589LT1GHigh Current Surface MountPNP Silicon SwitchingTransistor for Loadhttp://onsemi.comManagement in Portable Applications30 VOLTS, 2.0 AMPSPNP TRANSISTORSFeatures AEC-Q101 Qualified and PPAP Capable NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change RequirementsSOT-23 (TO-236) These Devices are P

 7.6. Size:196K  onsemi
mmbt6520l nsvmmbt6520l.pdf

NSVMMBTH10LT1G
NSVMMBTH10LT1G

MMBT6520L,NSVMMBT6520LHigh Voltage TransistorPNP Siliconwww.onsemi.comFeatures NSV Prefix for Automotive and Other Applications RequiringCOLLECTORUnique Site and Control Change Requirements; AEC-Q1013Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1BASECompliant2EMITTERMAXIMUM RATINGSRating Symbol Value UnitColl

 7.7. Size:164K  onsemi
mmbt589lt1g nsvmmbt589lt1g.pdf

NSVMMBTH10LT1G
NSVMMBTH10LT1G

MMBT589LT1G,NSVMMBT589LT1GHigh Current Surface MountPNP Silicon SwitchingTransistor for Loadwww.onsemi.comManagement in Portable Applications30 VOLTS, 2.0 AMPSPNP TRANSISTORSFeatures NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC-Q101Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BF

 7.8. Size:50K  onsemi
nsvmmbt2907awt1g.pdf

NSVMMBTH10LT1G
NSVMMBTH10LT1G

MMBT2907AWT1G,NSVMMBT2907AWT1GGeneral Purpose TransistorPNP SiliconThese transistors are designed for general purpose amplifierhttp://onsemi.comapplications. They are housed in the SC-70/SOT-323 package whichis designed for low power surface mount applications.COLLECTORFeatures 3 NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Re

 7.9. Size:81K  onsemi
mmbt5401l smmbt5401l nsvmmbt5401l.pdf

NSVMMBTH10LT1G
NSVMMBTH10LT1G

MMBT5401L, SMMBT5401L,NSVMMBT5401LHigh Voltage TransistorPNP Siliconwww.onsemi.comFeatures S and NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC-Q101Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSSOT-23 (TO-236)CompliantCASE 318STYLE 6MAXIMUM RATINGSCOLLECTOR

 7.10. Size:124K  onsemi
nsvmmbt6517lt1g.pdf

NSVMMBTH10LT1G
NSVMMBTH10LT1G

MMBT6517L,NSVMMBT6517LHigh Voltage TransistorNPN Siliconhttp://onsemi.comFeatures NSV Prefix for Automotive and Other Applications RequiringCOLLECTORUnique Site and Control Change Requirements; AEC-Q1013Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1CompliantBASEMAXIMUM RATINGS2Rating Symbol Value UnitEMITTERC

 7.11. Size:123K  onsemi
nsvmmbt2222att1g.pdf

NSVMMBTH10LT1G
NSVMMBTH10LT1G

MMBT2222ATT1G,NSVMMBT2222ATT1GGeneral Purpose TransistorNPN SiliconThese transistors are designed for general purpose amplifierhttp://onsemi.comapplications. They are housed in the SOT-416/SC-75 package whichis designed for low power surface mount applications.COLLECTOR3Features NSV Prefix for Automotive and Other Applications Requiring1Unique Site and Control Chang

 7.12. Size:119K  onsemi
mmbt2222att1g nsvmmbt2222att1g.pdf

NSVMMBTH10LT1G
NSVMMBTH10LT1G

MMBT2222ATT1G,NSVMMBT2222ATT1GGeneral Purpose TransistorNPN SiliconThese transistors are designed for general purpose amplifierhttp://onsemi.comapplications. They are housed in the SOT-416/SC-75 package whichis designed for low power surface mount applications.COLLECTOR3Features NSV Prefix for Automotive and Other Applications Requiring1Unique Site and Control Chang

 7.13. Size:82K  onsemi
mmbt6428lt1g mmbt6429lt1g nsvmmbt6429lt1g.pdf

NSVMMBTH10LT1G
NSVMMBTH10LT1G

MMBT6428LT1G,MMBT6429LT1G,NSVMMBT6429LT1GAmplifier TransistorsNPN Siliconwww.onsemi.comFeaturesCOLLECTOR3 NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC-Q1011Qualified and PPAP CapableBASE These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant2EMITTER3SOT-23 (TO-236)MAXIMUM

 7.14. Size:125K  onsemi
nsvmmbt6429lt1g.pdf

NSVMMBTH10LT1G
NSVMMBTH10LT1G

MMBT6428LT1G,MMBT6429LT1G,NSVMMBT6429LT1GAmplifier TransistorsNPN Siliconhttp://onsemi.comFeaturesCOLLECTOR3 NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC-Q1011Qualified and PPAP CapableBASE These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant2EMITTER3SOT-23 (TO-236)MAXIM

 7.15. Size:99K  onsemi
nsvmmbt5087lt1g.pdf

NSVMMBTH10LT1G
NSVMMBTH10LT1G

MMBT5087LLow Noise TransistorPNP SiliconFeatures NSV Prefix for Automotive and Other Applications Requiringhttp://onsemi.comUnique Site and Control Change Requirements; AEC-Q101Qualified and PPAP CapableCOLLECTOR3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant1BASEMAXIMUM RATINGS2Rating Symbol Value UnitEMITTERCollector-Emitter V

 7.16. Size:67K  onsemi
mmbt2907awt1g nsvmmbt2907awt1g.pdf

NSVMMBTH10LT1G
NSVMMBTH10LT1G

MMBT2907AWT1G,NSVMMBT2907AWT1GGeneral Purpose TransistorPNP SiliconThese transistors are designed for general purpose amplifierwww.onsemi.comapplications. They are housed in the SC-70/SOT-323 package whichis designed for low power surface mount applications.COLLECTORFeatures3 NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requ

 7.17. Size:72K  onsemi
nsvmmbta05lt1g.pdf

NSVMMBTH10LT1G
NSVMMBTH10LT1G

MMBTA05L, MMBTA06LDriver TransistorsNPN SiliconFeatures S and NSV Prefix for Automotive and Other Applications Requiringhttp://onsemi.comUnique Site and Control Change Requirements; AEC-Q101Qualified and PPAP CapableCOLLECTOR3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant1BASEMAXIMUM RATINGS2Rating Symbol Value UnitEMITTERCollec

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