NSVMMBTH10LT1G Datasheet, Equivalent, Cross Reference Search
Type Designator: NSVMMBTH10LT1G
SMD Transistor Code: 3EM
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.23 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.04 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 650 MHz
Collector Capacitance (Cc): 0.7 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: SOT23
NSVMMBTH10LT1G Transistor Equivalent Substitute - Cross-Reference Search
NSVMMBTH10LT1G Datasheet (PDF)
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Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , TIP31C , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .