NSVMMBTH10LT1G Datasheet, Equivalent, Cross Reference Search
Type Designator: NSVMMBTH10LT1G
SMD Transistor Code: 3EM
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.23 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.04 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 650 MHz
Collector Capacitance (Cc): 0.7 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: SOT23
NSVMMBTH10LT1G Transistor Equivalent Substitute - Cross-Reference Search
NSVMMBTH10LT1G Datasheet (PDF)
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