NSVDTA114EET1G Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NSVDTA114EET1G

Código: 6A

Material: Si

Polaridad de transistor: Pre-Biased-PNP

Resistencia de Entrada Base R1 = 10 kOhm

Resistencia Base-Emisor R2 = 10 kOhm

Ratio típica de resistencia R1/R2 = 1

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.2 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 50 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 35

Encapsulados: SOT416

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NSVDTA114EET1G datasheet

 ..1. Size:156K  onsemi
 nsvdta114eet1g.pdf pdf_icon

NSVDTA114EET1G

MUN2111, MMUN2111L, MUN5111, DTA114EE, DTA114EM3, NSBA114EF3 Digital Transistors (BRT) R1 = 10 kW, R2 = 10 kW http //onsemi.com PNP Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 COLLECTOR This series of digital transistors is designed to replace a single (OUTPUT) PIN 1 device and its external resistor bias network. The Bias Resistor R1 BASE Transistor (

 4.1. Size:156K  onsemi
 nsvdta114em3t5g.pdf pdf_icon

NSVDTA114EET1G

MUN2111, MMUN2111L, MUN5111, DTA114EE, DTA114EM3, NSBA114EF3 Digital Transistors (BRT) R1 = 10 kW, R2 = 10 kW http //onsemi.com PNP Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 COLLECTOR This series of digital transistors is designed to replace a single (OUTPUT) PIN 1 device and its external resistor bias network. The Bias Resistor R1 BASE Transistor (

 6.1. Size:110K  onsemi
 nsvdta113em3t5g.pdf pdf_icon

NSVDTA114EET1G

MUN2130, MMUN2130L, MUN5130, DTA113EE, DTA113EM3, NSBA113EF3 Digital Transistors (BRT) R1 = 1 kW, R2 = 1 kW www.onsemi.com PNP Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 COLLECTOR This series of digital transistors is designed to replace a single (OUTPUT) PIN 1 device and its external resistor bias network. The Bias Resistor R1 BASE Transistor (BRT)

 6.2. Size:99K  onsemi
 nsvdta115eet1g.pdf pdf_icon

NSVDTA114EET1G

MUN2136, MMUN2136L, MUN5136, DTA115EE, DTA115EM3 Digital Transistors (BRT) R1 = 100 kW, R2 = 100 kW www.onsemi.com PNP Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 COLLECTOR This series of digital transistors is designed to replace a single (OUTPUT) PIN 1 device and its external resistor bias network. The Bias Resistor R1 BASE Transistor (BRT) contains

MOSTRAR MÁS

Otros transistores... NSVMMBT5401WT1G, NSVMMBT589LT1G, NSVMMBT6429LT1G, NSVMMBT6517LT1G, NSVMMBT6520LT1G, NSVMMBTA05LT1G, NSVMMBTH10LT1G, NSVDTA113EM3T5G, D667, NSVDTA114EM3T5G, NSVDTA115EET1G, NSVDTA123EM3T5G, NSVDTA143ZET1G, NSVDTA144EET1G, NSVDTA144WET1G, NSVDTC113EM3T5G, NSVDTC114YM3T5G