NSVDTA114EET1G Todos los transistores

 

NSVDTA114EET1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NSVDTA114EET1G
   Código: 6A
   Material: Si
   Polaridad de transistor: Pre-Biased-PNP
   Resistencia de Entrada Base R1 = 10 kOhm
   Resistencia Base-Emisor R2 = 10 kOhm
   Ratio típica de resistencia R1/R2 = 1

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.2 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 35
   Paquete / Cubierta: SOT416
 

 Búsqueda de reemplazo de NSVDTA114EET1G

   - Selección ⓘ de transistores por parámetros

 

NSVDTA114EET1G Datasheet (PDF)

 ..1. Size:156K  onsemi
 nsvdta114eet1g.pdf pdf_icon

NSVDTA114EET1G

MUN2111, MMUN2111L,MUN5111, DTA114EE,DTA114EM3, NSBA114EF3Digital Transistors (BRT)R1 = 10 kW, R2 = 10 kWhttp://onsemi.comPNP Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (

 4.1. Size:156K  onsemi
 nsvdta114em3t5g.pdf pdf_icon

NSVDTA114EET1G

MUN2111, MMUN2111L,MUN5111, DTA114EE,DTA114EM3, NSBA114EF3Digital Transistors (BRT)R1 = 10 kW, R2 = 10 kWhttp://onsemi.comPNP Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (

 6.1. Size:110K  onsemi
 nsvdta113em3t5g.pdf pdf_icon

NSVDTA114EET1G

MUN2130, MMUN2130L,MUN5130, DTA113EE,DTA113EM3, NSBA113EF3Digital Transistors (BRT)R1 = 1 kW, R2 = 1 kWwww.onsemi.comPNP Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (BRT)

 6.2. Size:99K  onsemi
 nsvdta115eet1g.pdf pdf_icon

NSVDTA114EET1G

MUN2136, MMUN2136L,MUN5136, DTA115EE,DTA115EM3Digital Transistors (BRT)R1 = 100 kW, R2 = 100 kWwww.onsemi.comPNP Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (BRT) contains

MOSTRAR MÁS

Otros transistores... NSVMMBT5401WT1G , NSVMMBT589LT1G , NSVMMBT6429LT1G , NSVMMBT6517LT1G , NSVMMBT6520LT1G , NSVMMBTA05LT1G , NSVMMBTH10LT1G , NSVDTA113EM3T5G , S9018 , NSVDTA114EM3T5G , NSVDTA115EET1G , NSVDTA123EM3T5G , NSVDTA143ZET1G , NSVDTA144EET1G , NSVDTA144WET1G , NSVDTC113EM3T5G , NSVDTC114YM3T5G .

History: 2SD2401Y | 2SC3724 | BC846F

 

 
Back to Top

 


 
.