NSVDTA114EET1G Specs and Replacement
Type Designator: NSVDTA114EET1G
SMD Transistor Code: 6A
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 10 kOhm
Built in Bias Resistor R2 = 10 kOhm
Typical Resistor Ratio R1/R2 = 1
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 35
Package: SOT416
NSVDTA114EET1G Substitution
- BJT ⓘ Cross-Reference Search
NSVDTA114EET1G datasheet
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Detailed specifications: NSVMMBT5401WT1G, NSVMMBT589LT1G, NSVMMBT6429LT1G, NSVMMBT6517LT1G, NSVMMBT6520LT1G, NSVMMBTA05LT1G, NSVMMBTH10LT1G, NSVDTA113EM3T5G, D667, NSVDTA114EM3T5G, NSVDTA115EET1G, NSVDTA123EM3T5G, NSVDTA143ZET1G, NSVDTA144EET1G, NSVDTA144WET1G, NSVDTC113EM3T5G, NSVDTC114YM3T5G
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