NSVDTA123EM3T5G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NSVDTA123EM3T5G
Código: 6H
Material: Si
Polaridad de transistor: Pre-Biased-PNP
Resistencia de Entrada Base R1 = 2.2 kOhm
Resistencia Base-Emisor R2 = 2.2 kOhm
Ratio típica de resistencia R1/R2 = 1
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.26 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 8
Paquete / Cubierta: SOT723
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NSVDTA123EM3T5G Datasheet (PDF)
nsvdta123em3t5g.pdf

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nsvdta113em3t5g.pdf

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nsvdta144eet1g.pdf

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Otros transistores... NSVMMBT6517LT1G , NSVMMBT6520LT1G , NSVMMBTA05LT1G , NSVMMBTH10LT1G , NSVDTA113EM3T5G , NSVDTA114EET1G , NSVDTA114EM3T5G , NSVDTA115EET1G , BD777 , NSVDTA143ZET1G , NSVDTA144EET1G , NSVDTA144WET1G , NSVDTC113EM3T5G , NSVDTC114YM3T5G , NSVDTC123EM3T5G , NSVDTC143ZET1G , NSVDTC143ZM3T5G .



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