NSVDTA123EM3T5G Todos los transistores

 

NSVDTA123EM3T5G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NSVDTA123EM3T5G
   Código: 6H
   Material: Si
   Polaridad de transistor: Pre-Biased-PNP
   Resistencia de Entrada Base R1 = 2.2 kOhm
   Resistencia Base-Emisor R2 = 2.2 kOhm
   Ratio típica de resistencia R1/R2 = 1

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.26 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 8
   Paquete / Cubierta: SOT723
 

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NSVDTA123EM3T5G Datasheet (PDF)

 0.1. Size:109K  onsemi
nsvdta123em3t5g.pdf pdf_icon

NSVDTA123EM3T5G

MUN2131, MMUN2131L,MUN5131, DTA123EE,DTA123EM3, NSBA123EF3Digital Transistors (BRT)R1 = 2.2 kW, R2 = 2.2 kWwww.onsemi.comPNP Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (B

 7.1. Size:110K  onsemi
nsvdta113em3t5g.pdf pdf_icon

NSVDTA123EM3T5G

MUN2130, MMUN2130L,MUN5130, DTA113EE,DTA113EM3, NSBA113EF3Digital Transistors (BRT)R1 = 1 kW, R2 = 1 kWwww.onsemi.comPNP Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (BRT)

 7.2. Size:119K  onsemi
nsvdta144eet1g.pdf pdf_icon

NSVDTA123EM3T5G

MUN2113, MMUN2113L,MUN5113, DTA144EE,DTA144EM3, NSBA144EF3Digital Transistors (BRT)R1 = 47 kW, R2 = 47 kWwww.onsemi.comPNP Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (BRT

 7.3. Size:156K  onsemi
nsvdta114eet1g.pdf pdf_icon

NSVDTA123EM3T5G

MUN2111, MMUN2111L,MUN5111, DTA114EE,DTA114EM3, NSBA114EF3Digital Transistors (BRT)R1 = 10 kW, R2 = 10 kWhttp://onsemi.comPNP Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (

Otros transistores... NSVMMBT6517LT1G , NSVMMBT6520LT1G , NSVMMBTA05LT1G , NSVMMBTH10LT1G , NSVDTA113EM3T5G , NSVDTA114EET1G , NSVDTA114EM3T5G , NSVDTA115EET1G , BD777 , NSVDTA143ZET1G , NSVDTA144EET1G , NSVDTA144WET1G , NSVDTC113EM3T5G , NSVDTC114YM3T5G , NSVDTC123EM3T5G , NSVDTC143ZET1G , NSVDTC143ZM3T5G .

 

 
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