NSBC115EDXV6T1G Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NSBC115EDXV6T1G

Código: 7N

Material: Si

Polaridad de transistor: Pre-Biased-NPN

Resistencia de Entrada Base R1 = 100 kOhm

Resistencia Base-Emisor R2 = 100 kOhm

Ratio típica de resistencia R1/R2 = 1

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.36 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 50 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 80

Encapsulados: SOT563

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NSBC115EDXV6T1G datasheet

 2.1. Size:113K  onsemi
 nsbc115edxv6.pdf pdf_icon

NSBC115EDXV6T1G

MUN5236DW1, NSBC115EDXV6 Dual NPN Bias Resistor Transistors R1 = 100 kW, R2 = 100 kW http //onsemi.com NPN Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network (3) (2) (1) This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor R1 R2 Transistor (BRT) contains a single transistor with a monolith

 7.1. Size:150K  onsemi
 nsbc115tf3.pdf pdf_icon

NSBC115EDXV6T1G

MUN2241, MMUN2241L, MUN5241, DTC115TE, DTC115TM3, NSBC115TF3 Digital Transistors (BRT) R1 = 100 kW, R2 = 8 kW http //onsemi.com NPN Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 COLLECTOR This series of digital transistors is designed to replace a single (OUTPUT) PIN 1 device and its external resistor bias network. The Bias Resistor R1 BASE Transistor (

 7.2. Size:106K  onsemi
 nsbc115tpdp6.pdf pdf_icon

NSBC115EDXV6T1G

NSBC115TPDP6 Complementary Bias Resistor Transistors R1 = 100 kW, R2 = 8 kW NPN and PNP Transistors with Monolithic http //onsemi.com Bias Resistor Network PIN CONNECTIONS This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor (3) (2) (1) Transistor (BRT) contains a single transistor with a monolithic bias

 7.3. Size:101K  onsemi
 nsbc115tdp6.pdf pdf_icon

NSBC115EDXV6T1G

NSBC115TD Dual NPN Bias Resistor Transistors R1 = 100 kW, R2 = 8 kW NPN Transistors with Monolithic Bias http //onsemi.com Resistor Network MARKING This series of digital transistors is designed to replace a single DIAGRAM device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias AFMG SOT-963 network cons

MOSTRAR MÁS

Otros transistores... NSBC114YF3, NSBC114YF3T5G, NSBC114YPDP6, NSBC114YPDP6T5G, NSBC114YPDXV6, NSBC114YPDXV6T1G, NSBC114YPDXV6T5G, NSBC115EDXV6, 2SD313, NSBC115TDP6, NSBC115TDP6T5G, NSBC115TF3, NSBC115TF3T5G, NSBC115TPDP6, NSBC115TPDP6T5G, NSVBCX17LT1G, NSVBSP19AT1G