NSBC115EDXV6T1G Todos los transistores

 

NSBC115EDXV6T1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NSBC115EDXV6T1G
   Código: 7N
   Material: Si
   Polaridad de transistor: Pre-Biased-NPN
   Resistencia de Entrada Base R1 = 100 kOhm
   Resistencia Base-Emisor R2 = 100 kOhm
   Ratio típica de resistencia R1/R2 = 1

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.36 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 80
   Paquete / Cubierta: SOT563
 

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NSBC115EDXV6T1G Datasheet (PDF)

 2.1. Size:113K  onsemi
 nsbc115edxv6.pdf pdf_icon

NSBC115EDXV6T1G

MUN5236DW1,NSBC115EDXV6Dual NPN Bias ResistorTransistorsR1 = 100 kW, R2 = 100 kWhttp://onsemi.comNPN Transistors with Monolithic BiasPIN CONNECTIONSResistor Network(3) (2) (1)This series of digital transistors is designed to replace a singledevice and its external resistor bias network. The Bias ResistorR1 R2Transistor (BRT) contains a single transistor with a monolith

 7.1. Size:150K  onsemi
 nsbc115tf3.pdf pdf_icon

NSBC115EDXV6T1G

MUN2241, MMUN2241L,MUN5241, DTC115TE,DTC115TM3, NSBC115TF3Digital Transistors (BRT)R1 = 100 kW, R2 = 8 kWhttp://onsemi.comNPN Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (

 7.2. Size:106K  onsemi
 nsbc115tpdp6.pdf pdf_icon

NSBC115EDXV6T1G

NSBC115TPDP6Complementary BiasResistor TransistorsR1 = 100 kW, R2 = 8 kWNPN and PNP Transistors with Monolithichttp://onsemi.comBias Resistor NetworkPIN CONNECTIONSThis series of digital transistors is designed to replace a singledevice and its external resistor bias network. The Bias Resistor(3) (2) (1)Transistor (BRT) contains a single transistor with a monolithic bias

 7.3. Size:101K  onsemi
 nsbc115tdp6.pdf pdf_icon

NSBC115EDXV6T1G

NSBC115TDDual NPN Bias ResistorTransistorsR1 = 100 kW, R2 = 8 kWNPN Transistors with Monolithic Biashttp://onsemi.comResistor NetworkMARKING This series of digital transistors is designed to replace a singleDIAGRAMdevice and its external resistor bias network. The Bias ResistorTransistor (BRT) contains a single transistor with a monolithic biasAFMGSOT-963network cons

MOSTRAR MÁS

Otros transistores... NSBC114YF3 , NSBC114YF3T5G , NSBC114YPDP6 , NSBC114YPDP6T5G , NSBC114YPDXV6 , NSBC114YPDXV6T1G , NSBC114YPDXV6T5G , NSBC115EDXV6 , BC558 , NSBC115TDP6 , NSBC115TDP6T5G , NSBC115TF3 , NSBC115TF3T5G , NSBC115TPDP6 , NSBC115TPDP6T5G , NSVBCX17LT1G , NSVBSP19AT1G .

History: FJX4003R | CJF105

 

 
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