All Transistors. NSBC115EDXV6T1G Datasheet

 

NSBC115EDXV6T1G Datasheet and Replacement


   Type Designator: NSBC115EDXV6T1G
   SMD Transistor Code: 7N
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 100 kOhm
   Built in Bias Resistor R2 = 100 kOhm
   Typical Resistor Ratio R1/R2 = 1
   Maximum Collector Power Dissipation (Pc): 0.36 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 80
   Noise Figure, dB: -
   Package: SOT563
 

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NSBC115EDXV6T1G Datasheet (PDF)

 2.1. Size:113K  onsemi
 nsbc115edxv6.pdf pdf_icon

NSBC115EDXV6T1G

MUN5236DW1,NSBC115EDXV6Dual NPN Bias ResistorTransistorsR1 = 100 kW, R2 = 100 kWhttp://onsemi.comNPN Transistors with Monolithic BiasPIN CONNECTIONSResistor Network(3) (2) (1)This series of digital transistors is designed to replace a singledevice and its external resistor bias network. The Bias ResistorR1 R2Transistor (BRT) contains a single transistor with a monolith

 7.1. Size:150K  onsemi
 nsbc115tf3.pdf pdf_icon

NSBC115EDXV6T1G

MUN2241, MMUN2241L,MUN5241, DTC115TE,DTC115TM3, NSBC115TF3Digital Transistors (BRT)R1 = 100 kW, R2 = 8 kWhttp://onsemi.comNPN Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (

 7.2. Size:106K  onsemi
 nsbc115tpdp6.pdf pdf_icon

NSBC115EDXV6T1G

NSBC115TPDP6Complementary BiasResistor TransistorsR1 = 100 kW, R2 = 8 kWNPN and PNP Transistors with Monolithichttp://onsemi.comBias Resistor NetworkPIN CONNECTIONSThis series of digital transistors is designed to replace a singledevice and its external resistor bias network. The Bias Resistor(3) (2) (1)Transistor (BRT) contains a single transistor with a monolithic bias

 7.3. Size:101K  onsemi
 nsbc115tdp6.pdf pdf_icon

NSBC115EDXV6T1G

NSBC115TDDual NPN Bias ResistorTransistorsR1 = 100 kW, R2 = 8 kWNPN Transistors with Monolithic Biashttp://onsemi.comResistor NetworkMARKING This series of digital transistors is designed to replace a singleDIAGRAMdevice and its external resistor bias network. The Bias ResistorTransistor (BRT) contains a single transistor with a monolithic biasAFMGSOT-963network cons

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Datasheet: NSBC114YF3 , NSBC114YF3T5G , NSBC114YPDP6 , NSBC114YPDP6T5G , NSBC114YPDXV6 , NSBC114YPDXV6T1G , NSBC114YPDXV6T5G , NSBC115EDXV6 , BC558 , NSBC115TDP6 , NSBC115TDP6T5G , NSBC115TF3 , NSBC115TF3T5G , NSBC115TPDP6 , NSBC115TPDP6T5G , NSVBCX17LT1G , NSVBSP19AT1G .

History: BFQ71 | KT3139B | NB321K

Keywords - NSBC115EDXV6T1G transistor datasheet

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