NSBC115EDXV6T1G Datasheet, Equivalent, Cross Reference Search
Type Designator: NSBC115EDXV6T1G
SMD Transistor Code: 7N
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 100 kOhm
Built in Bias Resistor R2 = 100 kOhm
Typical Resistor Ratio R1/R2 = 1
Maximum Collector Power Dissipation (Pc): 0.36
W
Maximum Collector-Base Voltage |Vcb|: 50
V
Maximum Collector-Emitter Voltage |Vce|: 50
V
Maximum Collector Current |Ic max|: 0.1
A
Max. Operating Junction Temperature (Tj): 150
°C
Forward Current Transfer Ratio (hFE), MIN: 80
Noise Figure, dB: -
Package: SOT563
NSBC115EDXV6T1G Transistor Equivalent Substitute - Cross-Reference Search
NSBC115EDXV6T1G Datasheet (PDF)
nsbc115edxv6.pdf
MUN5236DW1,NSBC115EDXV6Dual NPN Bias ResistorTransistorsR1 = 100 kW, R2 = 100 kWhttp://onsemi.comNPN Transistors with Monolithic BiasPIN CONNECTIONSResistor Network(3) (2) (1)This series of digital transistors is designed to replace a singledevice and its external resistor bias network. The Bias ResistorR1 R2Transistor (BRT) contains a single transistor with a monolith
nsbc115tf3.pdf
MUN2241, MMUN2241L,MUN5241, DTC115TE,DTC115TM3, NSBC115TF3Digital Transistors (BRT)R1 = 100 kW, R2 = 8 kWhttp://onsemi.comNPN Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (
nsbc115tpdp6.pdf
NSBC115TPDP6Complementary BiasResistor TransistorsR1 = 100 kW, R2 = 8 kWNPN and PNP Transistors with Monolithichttp://onsemi.comBias Resistor NetworkPIN CONNECTIONSThis series of digital transistors is designed to replace a singledevice and its external resistor bias network. The Bias Resistor(3) (2) (1)Transistor (BRT) contains a single transistor with a monolithic bias
nsbc115tdp6.pdf
NSBC115TDDual NPN Bias ResistorTransistorsR1 = 100 kW, R2 = 8 kWNPN Transistors with Monolithic Biashttp://onsemi.comResistor NetworkMARKING This series of digital transistors is designed to replace a singleDIAGRAMdevice and its external resistor bias network. The Bias ResistorTransistor (BRT) contains a single transistor with a monolithic biasAFMGSOT-963network cons
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
