NSBC115EDXV6T1G. Аналоги и основные параметры

Наименование производителя: NSBC115EDXV6T1G

Маркировка: 7N

Тип материала: Si

Полярность: Pre-Biased-NPN

Встроенный резистор цепи смещения R1 = 100 kOhm

Встроенный резистор цепи смещения R2 = 100 kOhm

Соотношение сопротивлений R1/R2 = 1

Предельные значения

Максимальная рассеиваемая мощность (Pc): 0.36 W

Макcимально допустимое напряжение коллектор-база (Ucb): 50 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V

Макcимальный постоянный ток коллектора (Ic): 0.1 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Статический коэффициент передачи тока (hFE): 80

Корпус транзистора: SOT563

 Аналоги (замена) для NSBC115EDXV6T1G

- подборⓘ биполярного транзистора по параметрам

 

NSBC115EDXV6T1G даташит

 2.1. Size:113K  onsemi
 nsbc115edxv6.pdf pdf_icon

NSBC115EDXV6T1G

MUN5236DW1, NSBC115EDXV6 Dual NPN Bias Resistor Transistors R1 = 100 kW, R2 = 100 kW http //onsemi.com NPN Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network (3) (2) (1) This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor R1 R2 Transistor (BRT) contains a single transistor with a monolith

 7.1. Size:150K  onsemi
 nsbc115tf3.pdf pdf_icon

NSBC115EDXV6T1G

MUN2241, MMUN2241L, MUN5241, DTC115TE, DTC115TM3, NSBC115TF3 Digital Transistors (BRT) R1 = 100 kW, R2 = 8 kW http //onsemi.com NPN Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 COLLECTOR This series of digital transistors is designed to replace a single (OUTPUT) PIN 1 device and its external resistor bias network. The Bias Resistor R1 BASE Transistor (

 7.2. Size:106K  onsemi
 nsbc115tpdp6.pdf pdf_icon

NSBC115EDXV6T1G

NSBC115TPDP6 Complementary Bias Resistor Transistors R1 = 100 kW, R2 = 8 kW NPN and PNP Transistors with Monolithic http //onsemi.com Bias Resistor Network PIN CONNECTIONS This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor (3) (2) (1) Transistor (BRT) contains a single transistor with a monolithic bias

 7.3. Size:101K  onsemi
 nsbc115tdp6.pdf pdf_icon

NSBC115EDXV6T1G

NSBC115TD Dual NPN Bias Resistor Transistors R1 = 100 kW, R2 = 8 kW NPN Transistors with Monolithic Bias http //onsemi.com Resistor Network MARKING This series of digital transistors is designed to replace a single DIAGRAM device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias AFMG SOT-963 network cons

ПОКАЗАТЬ ЕЩЁ

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