NSVEMD4DXV6T5G Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NSVEMD4DXV6T5G

Código: U7

Material: Si

Polaridad de transistor: Pre-Biased-NPN*PNP

Resistencia de Entrada Base R1 = 47 kOhm

Resistencia Base-Emisor R2 = 47 kOhm

Ratio típica de resistencia R1/R2 = 1

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.36 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 50 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 80

Encapsulados: SOT563

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NSVEMD4DXV6T5G datasheet

 ..1. Size:72K  onsemi
 nsvemd4dxv6t5g.pdf pdf_icon

NSVEMD4DXV6T5G

EMD4DXV6 Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http //onsemi.com The BRT (Bias Resistor Transistor) contains a single transistor with (3) (2) (1) a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. These digital transistors are R1 R2 designed to replace

 9.1. Size:102K  onsemi
 nsvemc2dxv5t1g.pdf pdf_icon

NSVEMD4DXV6T5G

EMC2DXV5T1G, EMC3DXV5T1G, EMC4DXV5T1G, EMC5DXV5T1G Dual Common http //onsemi.com Base-Collector Bias 31 2 Resistor Transistors R1 R2 NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Q2 R2 Resistor Network Q1 R1 The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base 45 resis

 9.2. Size:51K  onsemi
 nsvemx1dxv6t1g.pdf pdf_icon

NSVEMD4DXV6T5G

EMX1DXV6T1, EMX1DXV6T5 Preferred Devices Dual NPN General Purpose Amplifier Transistor This NPN transistor is designed for general purpose amplifier applications. This device is housed in the SOT-563 package which is http //onsemi.com designed for low power surface mount applications, where board space is at a premium. DUAL NPN GENERAL Features PURPOSE AMPLIFIER Reduces Board S

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