NSVEMD4DXV6T5G Specs and Replacement
Type Designator: NSVEMD4DXV6T5G
SMD Transistor Code: U7
Material of Transistor: Si
Polarity: Pre-Biased-NPN*PNP
Built in Bias Resistor R1 = 47 kOhm
Built in Bias Resistor R2 = 47 kOhm
Typical Resistor Ratio R1/R2 = 1
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.36 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 80
Package: SOT563
NSVEMD4DXV6T5G Substitution
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NSVEMD4DXV6T5G datasheet
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Detailed specifications: NSBC115TF3T5G, NSBC115TPDP6, NSBC115TPDP6T5G, NSVBCX17LT1G, NSVBSP19AT1G, NSVBSS63LT1G, NSVBT2222ADW1T1G, NSVEMC2DXV5T1G, 2SC2655, NSVEMX1DXV6T1G, NSVMBT3904DW1T3G, NSBC123EDXV6, NSBC123EDXV6T1G, NSBC123EF3, NSBC123EF3T5G, NSBC123EPDXV6, NSBC123EPDXV6T1G
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