NSVMBT3904DW1T3G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NSVMBT3904DW1T3G
Código: MA
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.15 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 40 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 0.2 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 300 MHz
Capacitancia de salida (Cc): 4 pF
Ganancia de corriente contínua (hfe): 100
Paquete / Cubierta: SOT363
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NSVMBT3904DW1T3G Datasheet (PDF)
nsvmbt3904dw1t3g.pdf
MBT3904DW1,MBT3904DW2,SMBT3904DW1,NSVMBT3904DW1Dual General Purposewww.onsemi.comTransistorsMARKINGThe MBT3904DW1 and MBT3904DW2 devices are a spin-off ofDIAGRAMour popular SOT-23/SOT-323 three-leaded device. It is designed for6general purpose amplifier applications and is housed in the SOT-363SOT-363/SC-88/six-leaded surface mount package. By putting two discrete de
mbt3904dw1 mbt3904dw2 smbt3904dw1 nsvmbt3904dw1.pdf
MBT3904DW1,MBT3904DW2,SMBT3904DW1,NSVMBT3904DW1Dual General Purposewww.onsemi.comTransistorsMARKINGThe MBT3904DW1 and MBT3904DW2 devices are a spin-off ofDIAGRAMour popular SOT-23/SOT-323 three-leaded device. It is designed for6general purpose amplifier applications and is housed in the SOT-363SOT-363/SC-88/six-leaded surface mount package. By putting two discrete de
Otros transistores... NSBC115TPDP6T5G , NSVBCX17LT1G , NSVBSP19AT1G , NSVBSS63LT1G , NSVBT2222ADW1T1G , NSVEMC2DXV5T1G , NSVEMD4DXV6T5G , NSVEMX1DXV6T1G , S9013 , NSBC123EDXV6 , NSBC123EDXV6T1G , NSBC123EF3 , NSBC123EF3T5G , NSBC123EPDXV6 , NSBC123EPDXV6T1G , NSBC123JDP6 , NSBC123JDP6T5G .
History: 2SC1345K | MJE5193
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