NSVMBT3904DW1T3G Specs and Replacement
Type Designator: NSVMBT3904DW1T3G
SMD Transistor Code: MA
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 300 MHz
Collector Capacitance (Cc): 4 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Package: SOT363
NSVMBT3904DW1T3G Substitution
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NSVMBT3904DW1T3G datasheet
MBT3904DW1, MBT3904DW2, SMBT3904DW1, NSVMBT3904DW1 Dual General Purpose www.onsemi.com Transistors MARKING The MBT3904DW1 and MBT3904DW2 devices are a spin-off of DIAGRAM our popular SOT-23/SOT-323 three-leaded device. It is designed for 6 general purpose amplifier applications and is housed in the SOT-363 SOT-363/SC-88/ six-leaded surface mount package. By putting two discrete de... See More ⇒
mbt3904dw1 mbt3904dw2 smbt3904dw1 nsvmbt3904dw1.pdf 
MBT3904DW1, MBT3904DW2, SMBT3904DW1, NSVMBT3904DW1 Dual General Purpose www.onsemi.com Transistors MARKING The MBT3904DW1 and MBT3904DW2 devices are a spin-off of DIAGRAM our popular SOT-23/SOT-323 three-leaded device. It is designed for 6 general purpose amplifier applications and is housed in the SOT-363 SOT-363/SC-88/ six-leaded surface mount package. By putting two discrete de... See More ⇒
Detailed specifications: NSBC115TPDP6T5G, NSVBCX17LT1G, NSVBSP19AT1G, NSVBSS63LT1G, NSVBT2222ADW1T1G, NSVEMC2DXV5T1G, NSVEMD4DXV6T5G, NSVEMX1DXV6T1G, 13005, NSBC123EDXV6, NSBC123EDXV6T1G, NSBC123EF3, NSBC123EF3T5G, NSBC123EPDXV6, NSBC123EPDXV6T1G, NSBC123JDP6, NSBC123JDP6T5G
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