All Transistors. NSVMBT3904DW1T3G Datasheet

 

NSVMBT3904DW1T3G Datasheet and Replacement


   Type Designator: NSVMBT3904DW1T3G
   SMD Transistor Code: MA
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 40 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.2 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 300 MHz
   Collector Capacitance (Cc): 4 pF
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: SOT363
 

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NSVMBT3904DW1T3G Datasheet (PDF)

 0.1. Size:100K  onsemi
 nsvmbt3904dw1t3g.pdf pdf_icon

NSVMBT3904DW1T3G

MBT3904DW1,MBT3904DW2,SMBT3904DW1,NSVMBT3904DW1Dual General Purposewww.onsemi.comTransistorsMARKINGThe MBT3904DW1 and MBT3904DW2 devices are a spin-off ofDIAGRAMour popular SOT-23/SOT-323 three-leaded device. It is designed for6general purpose amplifier applications and is housed in the SOT-363SOT-363/SC-88/six-leaded surface mount package. By putting two discrete de

 1.1. Size:96K  onsemi
 mbt3904dw1 mbt3904dw2 smbt3904dw1 nsvmbt3904dw1.pdf pdf_icon

NSVMBT3904DW1T3G

MBT3904DW1,MBT3904DW2,SMBT3904DW1,NSVMBT3904DW1Dual General Purposewww.onsemi.comTransistorsMARKINGThe MBT3904DW1 and MBT3904DW2 devices are a spin-off ofDIAGRAMour popular SOT-23/SOT-323 three-leaded device. It is designed for6general purpose amplifier applications and is housed in the SOT-363SOT-363/SC-88/six-leaded surface mount package. By putting two discrete de

Datasheet: NSBC115TPDP6T5G , NSVBCX17LT1G , NSVBSP19AT1G , NSVBSS63LT1G , NSVBT2222ADW1T1G , NSVEMC2DXV5T1G , NSVEMD4DXV6T5G , NSVEMX1DXV6T1G , S9013 , NSBC123EDXV6 , NSBC123EDXV6T1G , NSBC123EF3 , NSBC123EF3T5G , NSBC123EPDXV6 , NSBC123EPDXV6T1G , NSBC123JDP6 , NSBC123JDP6T5G .

History: BUW42A

Keywords - NSVMBT3904DW1T3G transistor datasheet

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