NSVBCP56-10T3G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NSVBCP56-10T3G
Código: BH-10
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 1.5 W
Tensión colector-base (Vcb): 100 V
Tensión colector-emisor (Vce): 80 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 130 MHz
Ganancia de corriente contínua (hfe): 63
Paquete / Cubierta: SOT223
Búsqueda de reemplazo de transistor bipolar NSVBCP56-10T3G
NSVBCP56-10T3G Datasheet (PDF)
nsvbcp56-10t3g.pdf
BCP56 SeriesNPN SiliconEpitaxial TransistorThese NPN Silicon Epitaxial transistors are designed for use inaudio amplifier applications. The device is housed in the SOT-223package, which is designed for medium power surface mounthttp://onsemi.comapplications.FeaturesMEDIUM POWER NPN SILICON High Current: 1.0 AHIGH CURRENT TRANSISTOR The SOT-223 package can be solder
nsvbcp53-16t3g.pdf
BCP53 SeriesPNP SiliconEpitaxial TransistorsThis PNP Silicon Epitaxial transistor is designed for use in audioamplifier applications. The device is housed in the SOT-223 packagewhich is designed for medium power surface mount applications.http://onsemi.com High Current NPN Complement is BCP56MEDIUM POWER HIGH The SOT-223 Package can be soldered using wave or reflow
bcp53t1g bcp53-16t1g bcp53-10t1g bcp53-16t3g sbcp53-16t1g sbcp53-10t1g sbcp53-10t1g nsvbcp53-16t3g.pdf
BCP53 SeriesPNP SiliconEpitaxial TransistorsThis PNP Silicon Epitaxial transistor is designed for use in audioamplifier applications. The device is housed in the SOT-223 packagewhich is designed for medium power surface mount applications.www.onsemi.com High Current NPN Complement is BCP56MEDIUM POWER HIGH The SOT-223 Package can be soldered using wave or reflow.
bcp69t1g nsvbcp69t1g.pdf
BCP69T1G, NSVBCP69T1GPNP SiliconEpitaxial TransistorThis PNP Silicon Epitaxial Transistor is designed for use in lowvoltage, high current applications. The device is housed in theSOT-223 package, which is designed for medium power surfacehttp://onsemi.commount applications.FeaturesMEDIUM POWER High Current: IC = -1.0 APNP SILICON The SOT-223 Package Can Be Soldered
nsvbcp69t1g.pdf
BCP69T1G, NSVBCP69T1GPNP SiliconEpitaxial TransistorThis PNP Silicon Epitaxial Transistor is designed for use in lowvoltage, high current applications. The device is housed in theSOT-223 package, which is designed for medium power surfacehttp://onsemi.commount applications.FeaturesMEDIUM POWER High Current: IC = -1.0 APNP SILICON The SOT-223 Package Can Be Soldered
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 2N5138 | BUW85
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