All Transistors. NSVBCP56-10T3G Datasheet

 

NSVBCP56-10T3G Datasheet and Replacement


   Type Designator: NSVBCP56-10T3G
   SMD Transistor Code: BH-10
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 1.5 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 130 MHz
   Forward Current Transfer Ratio (hFE), MIN: 63
   Noise Figure, dB: -
   Package: SOT223
 

 NSVBCP56-10T3G Substitution

   - BJT ⓘ Cross-Reference Search

   

NSVBCP56-10T3G Datasheet (PDF)

 ..1. Size:69K  onsemi
 nsvbcp56-10t3g.pdf pdf_icon

NSVBCP56-10T3G

BCP56 SeriesNPN SiliconEpitaxial TransistorThese NPN Silicon Epitaxial transistors are designed for use inaudio amplifier applications. The device is housed in the SOT-223package, which is designed for medium power surface mounthttp://onsemi.comapplications.FeaturesMEDIUM POWER NPN SILICON High Current: 1.0 AHIGH CURRENT TRANSISTOR The SOT-223 package can be solder

 7.1. Size:69K  onsemi
 nsvbcp53-16t3g.pdf pdf_icon

NSVBCP56-10T3G

BCP53 SeriesPNP SiliconEpitaxial TransistorsThis PNP Silicon Epitaxial transistor is designed for use in audioamplifier applications. The device is housed in the SOT-223 packagewhich is designed for medium power surface mount applications.http://onsemi.com High Current NPN Complement is BCP56MEDIUM POWER HIGH The SOT-223 Package can be soldered using wave or reflow

 7.2. Size:71K  onsemi
 bcp53t1g bcp53-16t1g bcp53-10t1g bcp53-16t3g sbcp53-16t1g sbcp53-10t1g sbcp53-10t1g nsvbcp53-16t3g.pdf pdf_icon

NSVBCP56-10T3G

BCP53 SeriesPNP SiliconEpitaxial TransistorsThis PNP Silicon Epitaxial transistor is designed for use in audioamplifier applications. The device is housed in the SOT-223 packagewhich is designed for medium power surface mount applications.www.onsemi.com High Current NPN Complement is BCP56MEDIUM POWER HIGH The SOT-223 Package can be soldered using wave or reflow.

 8.1. Size:126K  onsemi
 bcp69t1g nsvbcp69t1g.pdf pdf_icon

NSVBCP56-10T3G

BCP69T1G, NSVBCP69T1GPNP SiliconEpitaxial TransistorThis PNP Silicon Epitaxial Transistor is designed for use in lowvoltage, high current applications. The device is housed in theSOT-223 package, which is designed for medium power surfacehttp://onsemi.commount applications.FeaturesMEDIUM POWER High Current: IC = -1.0 APNP SILICON The SOT-223 Package Can Be Soldered

SHOW MORE

Datasheet: NSVMUN5316DW1T1G , NSVMUN5331DW1T1G , NSVMUN5332DW1T1G , NSVMUN5333DW1T1G , NSVMUN5333DW1T3G , NSVMUN5334DW1T1G , NSVPZTA92T1G , NSVBCP53-16T3G , D882 , NSVBCP69T1G , NSVBCW32LT1G , NSVBCW68GLT1G , NSVMSD42WT1G , NSVMUN2112T1G , NSVMUN2212T1G , NSVMUN2233T1G , NSVMUN2237T1G .

History: 2SD538A | KRA761U | ECG217 | 2SC1030 | P216V | NSVBC818-40L | 2SB339H

Keywords - NSVBCP56-10T3G transistor datasheet

 NSVBCP56-10T3G cross reference
 NSVBCP56-10T3G equivalent finder
 NSVBCP56-10T3G lookup
 NSVBCP56-10T3G substitution
 NSVBCP56-10T3G replacement

 

 
Back to Top

 


 
.