NSVBCP56-10T3G Datasheet, Equivalent, Cross Reference Search
Type Designator: NSVBCP56-10T3G
SMD Transistor Code: BH-10
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 1.5 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 130 MHz
Forward Current Transfer Ratio (hFE), MIN: 63
Noise Figure, dB: -
Package: SOT223
NSVBCP56-10T3G Transistor Equivalent Substitute - Cross-Reference Search
NSVBCP56-10T3G Datasheet (PDF)
nsvbcp56-10t3g.pdf
BCP56 SeriesNPN SiliconEpitaxial TransistorThese NPN Silicon Epitaxial transistors are designed for use inaudio amplifier applications. The device is housed in the SOT-223package, which is designed for medium power surface mounthttp://onsemi.comapplications.FeaturesMEDIUM POWER NPN SILICON High Current: 1.0 AHIGH CURRENT TRANSISTOR The SOT-223 package can be solder
nsvbcp53-16t3g.pdf
BCP53 SeriesPNP SiliconEpitaxial TransistorsThis PNP Silicon Epitaxial transistor is designed for use in audioamplifier applications. The device is housed in the SOT-223 packagewhich is designed for medium power surface mount applications.http://onsemi.com High Current NPN Complement is BCP56MEDIUM POWER HIGH The SOT-223 Package can be soldered using wave or reflow
bcp53t1g bcp53-16t1g bcp53-10t1g bcp53-16t3g sbcp53-16t1g sbcp53-10t1g sbcp53-10t1g nsvbcp53-16t3g.pdf
BCP53 SeriesPNP SiliconEpitaxial TransistorsThis PNP Silicon Epitaxial transistor is designed for use in audioamplifier applications. The device is housed in the SOT-223 packagewhich is designed for medium power surface mount applications.www.onsemi.com High Current NPN Complement is BCP56MEDIUM POWER HIGH The SOT-223 Package can be soldered using wave or reflow.
bcp69t1g nsvbcp69t1g.pdf
BCP69T1G, NSVBCP69T1GPNP SiliconEpitaxial TransistorThis PNP Silicon Epitaxial Transistor is designed for use in lowvoltage, high current applications. The device is housed in theSOT-223 package, which is designed for medium power surfacehttp://onsemi.commount applications.FeaturesMEDIUM POWER High Current: IC = -1.0 APNP SILICON The SOT-223 Package Can Be Soldered
nsvbcp69t1g.pdf
BCP69T1G, NSVBCP69T1GPNP SiliconEpitaxial TransistorThis PNP Silicon Epitaxial Transistor is designed for use in lowvoltage, high current applications. The device is housed in theSOT-223 package, which is designed for medium power surfacehttp://onsemi.commount applications.FeaturesMEDIUM POWER High Current: IC = -1.0 APNP SILICON The SOT-223 Package Can Be Soldered
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
