NSVBCP56-10T3G. Аналоги и основные параметры

Наименование производителя: NSVBCP56-10T3G

Маркировка: BH-10

Тип материала: Si

Полярность: NPN

Предельные значения

Максимальная рассеиваемая мощность (Pc): 1.5 W

Макcимально допустимое напряжение коллектор-база (Ucb): 100 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 80 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V

Макcимальный постоянный ток коллектора (Ic): 1 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Граничная частота коэффициента передачи тока (ft): 130 MHz

Статический коэффициент передачи тока (hFE): 63

Корпус транзистора: SOT223

 Аналоги (замена) для NSVBCP56-10T3G

- подборⓘ биполярного транзистора по параметрам

 

NSVBCP56-10T3G даташит

 ..1. Size:69K  onsemi
 nsvbcp56-10t3g.pdf pdf_icon

NSVBCP56-10T3G

BCP56 Series NPN Silicon Epitaxial Transistor These NPN Silicon Epitaxial transistors are designed for use in audio amplifier applications. The device is housed in the SOT-223 package, which is designed for medium power surface mount http //onsemi.com applications. Features MEDIUM POWER NPN SILICON High Current 1.0 A HIGH CURRENT TRANSISTOR The SOT-223 package can be solder

 7.1. Size:69K  onsemi
 nsvbcp53-16t3g.pdf pdf_icon

NSVBCP56-10T3G

BCP53 Series PNP Silicon Epitaxial Transistors This PNP Silicon Epitaxial transistor is designed for use in audio amplifier applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications. http //onsemi.com High Current NPN Complement is BCP56 MEDIUM POWER HIGH The SOT-223 Package can be soldered using wave or reflow

 7.2. Size:71K  onsemi
 bcp53t1g bcp53-16t1g bcp53-10t1g bcp53-16t3g sbcp53-16t1g sbcp53-10t1g sbcp53-10t1g nsvbcp53-16t3g.pdf pdf_icon

NSVBCP56-10T3G

BCP53 Series PNP Silicon Epitaxial Transistors This PNP Silicon Epitaxial transistor is designed for use in audio amplifier applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications. www.onsemi.com High Current NPN Complement is BCP56 MEDIUM POWER HIGH The SOT-223 Package can be soldered using wave or reflow.

 8.1. Size:126K  onsemi
 bcp69t1g nsvbcp69t1g.pdf pdf_icon

NSVBCP56-10T3G

BCP69T1G, NSVBCP69T1G PNP Silicon Epitaxial Transistor This PNP Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the SOT-223 package, which is designed for medium power surface http //onsemi.com mount applications. Features MEDIUM POWER High Current IC = -1.0 A PNP SILICON The SOT-223 Package Can Be Soldered

ПОКАЗАТЬ ЕЩЁ

Другие транзисторы: NSVMUN5316DW1T1G, NSVMUN5331DW1T1G, NSVMUN5332DW1T1G, NSVMUN5333DW1T1G, NSVMUN5333DW1T3G, NSVMUN5334DW1T1G, NSVPZTA92T1G, NSVBCP53-16T3G, BC337, NSVBCP69T1G, NSVBCW32LT1G, NSVBCW68GLT1G, NSVMSD42WT1G, NSVMUN2112T1G, NSVMUN2212T1G, NSVMUN2233T1G, NSVMUN2237T1G