Справочник транзисторов. NSVBCP56-10T3G

 

Биполярный транзистор NSVBCP56-10T3G Даташит. Аналоги


   Наименование производителя: NSVBCP56-10T3G
   Маркировка: BH-10
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 1.5 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 100 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 80 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 1 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 130 MHz
   Статический коэффициент передачи тока (hfe): 63
   Корпус транзистора: SOT223
 

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NSVBCP56-10T3G Datasheet (PDF)

 ..1. Size:69K  onsemi
 nsvbcp56-10t3g.pdf pdf_icon

NSVBCP56-10T3G

BCP56 SeriesNPN SiliconEpitaxial TransistorThese NPN Silicon Epitaxial transistors are designed for use inaudio amplifier applications. The device is housed in the SOT-223package, which is designed for medium power surface mounthttp://onsemi.comapplications.FeaturesMEDIUM POWER NPN SILICON High Current: 1.0 AHIGH CURRENT TRANSISTOR The SOT-223 package can be solder

 7.1. Size:69K  onsemi
 nsvbcp53-16t3g.pdf pdf_icon

NSVBCP56-10T3G

BCP53 SeriesPNP SiliconEpitaxial TransistorsThis PNP Silicon Epitaxial transistor is designed for use in audioamplifier applications. The device is housed in the SOT-223 packagewhich is designed for medium power surface mount applications.http://onsemi.com High Current NPN Complement is BCP56MEDIUM POWER HIGH The SOT-223 Package can be soldered using wave or reflow

 7.2. Size:71K  onsemi
 bcp53t1g bcp53-16t1g bcp53-10t1g bcp53-16t3g sbcp53-16t1g sbcp53-10t1g sbcp53-10t1g nsvbcp53-16t3g.pdf pdf_icon

NSVBCP56-10T3G

BCP53 SeriesPNP SiliconEpitaxial TransistorsThis PNP Silicon Epitaxial transistor is designed for use in audioamplifier applications. The device is housed in the SOT-223 packagewhich is designed for medium power surface mount applications.www.onsemi.com High Current NPN Complement is BCP56MEDIUM POWER HIGH The SOT-223 Package can be soldered using wave or reflow.

 8.1. Size:126K  onsemi
 bcp69t1g nsvbcp69t1g.pdf pdf_icon

NSVBCP56-10T3G

BCP69T1G, NSVBCP69T1GPNP SiliconEpitaxial TransistorThis PNP Silicon Epitaxial Transistor is designed for use in lowvoltage, high current applications. The device is housed in theSOT-223 package, which is designed for medium power surfacehttp://onsemi.commount applications.FeaturesMEDIUM POWER High Current: IC = -1.0 APNP SILICON The SOT-223 Package Can Be Soldered

ПОКАЗАТЬ ЕЩЁ

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History: 2SA503G | KRA768E | DTD543XE | 2SA1759 | P216V | CMC4035A | FHS3904-ME

 

 
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