NSV60100DMTWTBG Todos los transistores

 

NSV60100DMTWTBG . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NSV60100DMTWTBG
   Código: AP
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 2.27 W
   Tensión colector-base (Vcb): 80 V
   Tensión colector-emisor (Vce): 60 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 155 MHz
   Capacitancia de salida (Cc): 18 pF
   Ganancia de corriente contínua (hfe): 90
   Paquete / Cubierta: WDFN6
 

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NSV60100DMTWTBG Datasheet (PDF)

 0.1. Size:116K  onsemi
 nsv60100dmtwtbg.pdf pdf_icon

NSV60100DMTWTBG

NSS60100DMT60 V, 1 A, Low VCE(sat) PNPTransistorsON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesewww.onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is important.

 7.1. Size:109K  onsemi
 nsv60101dmtwtbg.pdf pdf_icon

NSV60100DMTWTBG

NSS60101DMT60 V, 1 A, Low VCE(sat) NPNTransistorsON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesewww.onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is important.

 9.1. Size:121K  onsemi
 nsv60201lt1g.pdf pdf_icon

NSV60100DMTWTBG

NSS60201LT1G60 V, 4.0 A, Low VCE(sat)NPN TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesehttp://onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is importa

 9.2. Size:126K  onsemi
 nsv60600mz4.pdf pdf_icon

NSV60100DMTWTBG

NSS60600MZ4,NSV60600MZ4T1G,NSV60600MZ4T3G60 V, 6.0 A, Low VCE(sat)PNP Transistorhttp://onsemi.comON Semiconductors e2PowerEdge family of low VCE(sat)transistors are surface mount devices featuring ultra low saturation-60 VOLTS, 6.0 AMPSvoltage (VCE(sat)) and high current gain capability. These are designed2.0 WATTSfor use in low voltage, high speed switching application

MOSTRAR MÁS

Otros transistores... NSVBCW32LT1G , NSVBCW68GLT1G , NSVMSD42WT1G , NSVMUN2112T1G , NSVMUN2212T1G , NSVMUN2233T1G , NSVMUN2237T1G , NSV40501UW3T2G , TIP42C , NSV60101DMTWTBG , NSV60200LT1G , NSV60201LT1G , NSV60600MZ4T1G , NSV60600MZ4T3G , NSV60601MZ4T1G , NSV60601MZ4T3G , NSV9435T1G .

History: 2SA1013T | ESM5008

 

 
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