Справочник транзисторов. NSV60100DMTWTBG

 

Биполярный транзистор NSV60100DMTWTBG Даташит. Аналоги


   Наименование производителя: NSV60100DMTWTBG
   Маркировка: AP
   Тип материала: Si
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 2.27 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 80 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 60 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
   Макcимальный постоянный ток коллектора (Ic): 1 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 155 MHz
   Ёмкость коллекторного перехода (Cc): 18 pf
   Статический коэффициент передачи тока (hfe): 90
   Корпус транзистора: WDFN6
     - подбор биполярного транзистора по параметрам

 

NSV60100DMTWTBG Datasheet (PDF)

 0.1. Size:116K  onsemi
 nsv60100dmtwtbg.pdf pdf_icon

NSV60100DMTWTBG

NSS60100DMT60 V, 1 A, Low VCE(sat) PNPTransistorsON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesewww.onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is important.

 7.1. Size:109K  onsemi
 nsv60101dmtwtbg.pdf pdf_icon

NSV60100DMTWTBG

NSS60101DMT60 V, 1 A, Low VCE(sat) NPNTransistorsON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesewww.onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is important.

 9.1. Size:121K  onsemi
 nsv60201lt1g.pdf pdf_icon

NSV60100DMTWTBG

NSS60201LT1G60 V, 4.0 A, Low VCE(sat)NPN TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesehttp://onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is importa

 9.2. Size:126K  onsemi
 nsv60600mz4.pdf pdf_icon

NSV60100DMTWTBG

NSS60600MZ4,NSV60600MZ4T1G,NSV60600MZ4T3G60 V, 6.0 A, Low VCE(sat)PNP Transistorhttp://onsemi.comON Semiconductors e2PowerEdge family of low VCE(sat)transistors are surface mount devices featuring ultra low saturation-60 VOLTS, 6.0 AMPSvoltage (VCE(sat)) and high current gain capability. These are designed2.0 WATTSfor use in low voltage, high speed switching application

ПОКАЗАТЬ ЕЩЁ

Другие транзисторы... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: CP401 | BF321 | 2SC889 | ZTX614 | ECH8503-TL-H | BD120 | MPS2484

 

 
Back to Top

 


 
.