NSV60100DMTWTBG Specs and Replacement
Type Designator: NSV60100DMTWTBG
SMD Transistor Code: AP
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 2.27 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 155 MHz
Collector Capacitance (Cc): 18 pF
Forward Current Transfer Ratio (hFE), MIN: 90
Package: WDFN6
NSV60100DMTWTBG Substitution
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NSV60100DMTWTBG datasheet
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Detailed specifications: NSVBCW32LT1G, NSVBCW68GLT1G, NSVMSD42WT1G, NSVMUN2112T1G, NSVMUN2212T1G, NSVMUN2233T1G, NSVMUN2237T1G, NSV40501UW3T2G, TIP42C, NSV60101DMTWTBG, NSV60200LT1G, NSV60201LT1G, NSV60600MZ4T1G, NSV60600MZ4T3G, NSV60601MZ4T1G, NSV60601MZ4T3G, NSV9435T1G
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