All Transistors. NSV60100DMTWTBG Datasheet

 

NSV60100DMTWTBG Datasheet and Replacement


   Type Designator: NSV60100DMTWTBG
   SMD Transistor Code: AP
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 2.27 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 155 MHz
   Collector Capacitance (Cc): 18 pF
   Forward Current Transfer Ratio (hFE), MIN: 90
   Noise Figure, dB: -
   Package: WDFN6
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NSV60100DMTWTBG Datasheet (PDF)

 0.1. Size:116K  onsemi
nsv60100dmtwtbg.pdf pdf_icon

NSV60100DMTWTBG

NSS60100DMT60 V, 1 A, Low VCE(sat) PNPTransistorsON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesewww.onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is important.

 7.1. Size:109K  onsemi
nsv60101dmtwtbg.pdf pdf_icon

NSV60100DMTWTBG

NSS60101DMT60 V, 1 A, Low VCE(sat) NPNTransistorsON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesewww.onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is important.

 9.1. Size:121K  onsemi
nsv60201lt1g.pdf pdf_icon

NSV60100DMTWTBG

NSS60201LT1G60 V, 4.0 A, Low VCE(sat)NPN TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesehttp://onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is importa

 9.2. Size:126K  onsemi
nsv60600mz4.pdf pdf_icon

NSV60100DMTWTBG

NSS60600MZ4,NSV60600MZ4T1G,NSV60600MZ4T3G60 V, 6.0 A, Low VCE(sat)PNP Transistorhttp://onsemi.comON Semiconductors e2PowerEdge family of low VCE(sat)transistors are surface mount devices featuring ultra low saturation-60 VOLTS, 6.0 AMPSvoltage (VCE(sat)) and high current gain capability. These are designed2.0 WATTSfor use in low voltage, high speed switching application

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: ET5061 | CV10806 | DC5412 | KT639B1 | KT837R1-IM | TED1502B | 2SB1337

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