NSV60101DMTWTBG . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NSV60101DMTWTBG
Código: AN
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 2.27 W
Tensión colector-base (Vcb): 80 V
Tensión colector-emisor (Vce): 60 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 180 MHz
Capacitancia de salida (Cc): 10 pF
Ganancia de corriente contínua (hfe): 90
Paquete / Cubierta: WDFN6
- Selección de transistores por parámetros
NSV60101DMTWTBG Datasheet (PDF)
nsv60101dmtwtbg.pdf

NSS60101DMT60 V, 1 A, Low VCE(sat) NPNTransistorsON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesewww.onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is important.
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NSS60600MZ4,NSV60600MZ4T1G,NSV60600MZ4T3G60 V, 6.0 A, Low VCE(sat)PNP Transistorhttp://onsemi.comON Semiconductors e2PowerEdge family of low VCE(sat)transistors are surface mount devices featuring ultra low saturation-60 VOLTS, 6.0 AMPSvoltage (VCE(sat)) and high current gain capability. These are designed2.0 WATTSfor use in low voltage, high speed switching application
Otros transistores... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SD2499 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
History: BFY33 | BC847BHZG | MP8213 | 2SC516 | 2SC4643 | MT0414 | NSBA143EDXV6
History: BFY33 | BC847BHZG | MP8213 | 2SC516 | 2SC4643 | MT0414 | NSBA143EDXV6



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