NSV60101DMTWTBG Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NSV60101DMTWTBG

Código: AN

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 2.27 W

Tensión colector-base (Vcb): 80 V

Tensión colector-emisor (Vce): 60 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 180 MHz

Capacitancia de salida (Cc): 10 pF

Ganancia de corriente contínua (hFE): 90

Encapsulados: WDFN6

 Búsqueda de reemplazo de NSV60101DMTWTBG

- Selecciónⓘ de transistores por parámetros

 

NSV60101DMTWTBG datasheet

 0.1. Size:109K  onsemi
 nsv60101dmtwtbg.pdf pdf_icon

NSV60101DMTWTBG

NSS60101DMT 60 V, 1 A, Low VCE(sat) NPN Transistors ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These www.onsemi.com are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important.

 7.1. Size:116K  onsemi
 nsv60100dmtwtbg.pdf pdf_icon

NSV60101DMTWTBG

NSS60100DMT 60 V, 1 A, Low VCE(sat) PNP Transistors ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These www.onsemi.com are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important.

 9.1. Size:121K  onsemi
 nsv60201lt1g.pdf pdf_icon

NSV60101DMTWTBG

NSS60201LT1G 60 V, 4.0 A, Low VCE(sat) NPN Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These http //onsemi.com are designed for use in low voltage, high speed switching applications where affordable efficient energy control is importa

 9.2. Size:126K  onsemi
 nsv60600mz4.pdf pdf_icon

NSV60101DMTWTBG

NSS60600MZ4, NSV60600MZ4T1G, NSV60600MZ4T3G 60 V, 6.0 A, Low VCE(sat) PNP Transistor http //onsemi.com ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation -60 VOLTS, 6.0 AMPS voltage (VCE(sat)) and high current gain capability. These are designed 2.0 WATTS for use in low voltage, high speed switching application

MOSTRAR MÁS

Otros transistores... NSVBCW68GLT1G, NSVMSD42WT1G, NSVMUN2112T1G, NSVMUN2212T1G, NSVMUN2233T1G, NSVMUN2237T1G, NSV40501UW3T2G, NSV60100DMTWTBG, 13009, NSV60200LT1G, NSV60201LT1G, NSV60600MZ4T1G, NSV60600MZ4T3G, NSV60601MZ4T1G, NSV60601MZ4T3G, NSV9435T1G, NSVBC817-16LT1G