All Transistors. NSV60101DMTWTBG Datasheet

 

NSV60101DMTWTBG Datasheet and Replacement


   Type Designator: NSV60101DMTWTBG
   SMD Transistor Code: AN
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 2.27 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 180 MHz
   Collector Capacitance (Cc): 10 pF
   Forward Current Transfer Ratio (hFE), MIN: 90
   Noise Figure, dB: -
   Package: WDFN6
 

 NSV60101DMTWTBG Substitution

   - BJT ⓘ Cross-Reference Search

   

NSV60101DMTWTBG Datasheet (PDF)

 0.1. Size:109K  onsemi
 nsv60101dmtwtbg.pdf pdf_icon

NSV60101DMTWTBG

NSS60101DMT60 V, 1 A, Low VCE(sat) NPNTransistorsON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesewww.onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is important.

 7.1. Size:116K  onsemi
 nsv60100dmtwtbg.pdf pdf_icon

NSV60101DMTWTBG

NSS60100DMT60 V, 1 A, Low VCE(sat) PNPTransistorsON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesewww.onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is important.

 9.1. Size:121K  onsemi
 nsv60201lt1g.pdf pdf_icon

NSV60101DMTWTBG

NSS60201LT1G60 V, 4.0 A, Low VCE(sat)NPN TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesehttp://onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is importa

 9.2. Size:126K  onsemi
 nsv60600mz4.pdf pdf_icon

NSV60101DMTWTBG

NSS60600MZ4,NSV60600MZ4T1G,NSV60600MZ4T3G60 V, 6.0 A, Low VCE(sat)PNP Transistorhttp://onsemi.comON Semiconductors e2PowerEdge family of low VCE(sat)transistors are surface mount devices featuring ultra low saturation-60 VOLTS, 6.0 AMPSvoltage (VCE(sat)) and high current gain capability. These are designed2.0 WATTSfor use in low voltage, high speed switching application

SHOW MORE

Datasheet: NSVBCW68GLT1G , NSVMSD42WT1G , NSVMUN2112T1G , NSVMUN2212T1G , NSVMUN2233T1G , NSVMUN2237T1G , NSV40501UW3T2G , NSV60100DMTWTBG , BC548 , NSV60200LT1G , NSV60201LT1G , NSV60600MZ4T1G , NSV60600MZ4T3G , NSV60601MZ4T1G , NSV60601MZ4T3G , NSV9435T1G , NSVBC817-16LT1G .

History: DTA114YMFHA | KSC2751O | TD163-1 | DTA114YM3 | MT0492 | TMPC1009F1 | 2SC1425

Keywords - NSV60101DMTWTBG transistor datasheet

 NSV60101DMTWTBG cross reference
 NSV60101DMTWTBG equivalent finder
 NSV60101DMTWTBG lookup
 NSV60101DMTWTBG substitution
 NSV60101DMTWTBG replacement

 

 
Back to Top

 


 
.