NSV60101DMTWTBG. Аналоги и основные параметры

Наименование производителя: NSV60101DMTWTBG

Маркировка: AN

Тип материала: Si

Полярность: NPN

Предельные значения

Максимальная рассеиваемая мощность (Pc): 2.27 W

Макcимально допустимое напряжение коллектор-база (Ucb): 80 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 60 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V

Макcимальный постоянный ток коллектора (Ic): 1 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Граничная частота коэффициента передачи тока (ft): 180 MHz

Ёмкость коллекторного перехода (Cc): 10 pf

Статический коэффициент передачи тока (hFE): 90

Корпус транзистора: WDFN6

 Аналоги (замена) для NSV60101DMTWTBG

- подборⓘ биполярного транзистора по параметрам

 

NSV60101DMTWTBG даташит

 0.1. Size:109K  onsemi
 nsv60101dmtwtbg.pdf pdf_icon

NSV60101DMTWTBG

NSS60101DMT 60 V, 1 A, Low VCE(sat) NPN Transistors ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These www.onsemi.com are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important.

 7.1. Size:116K  onsemi
 nsv60100dmtwtbg.pdf pdf_icon

NSV60101DMTWTBG

NSS60100DMT 60 V, 1 A, Low VCE(sat) PNP Transistors ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These www.onsemi.com are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important.

 9.1. Size:121K  onsemi
 nsv60201lt1g.pdf pdf_icon

NSV60101DMTWTBG

NSS60201LT1G 60 V, 4.0 A, Low VCE(sat) NPN Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These http //onsemi.com are designed for use in low voltage, high speed switching applications where affordable efficient energy control is importa

 9.2. Size:126K  onsemi
 nsv60600mz4.pdf pdf_icon

NSV60101DMTWTBG

NSS60600MZ4, NSV60600MZ4T1G, NSV60600MZ4T3G 60 V, 6.0 A, Low VCE(sat) PNP Transistor http //onsemi.com ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation -60 VOLTS, 6.0 AMPS voltage (VCE(sat)) and high current gain capability. These are designed 2.0 WATTS for use in low voltage, high speed switching application

ПОКАЗАТЬ ЕЩЁ

Другие транзисторы: NSVBCW68GLT1G, NSVMSD42WT1G, NSVMUN2112T1G, NSVMUN2212T1G, NSVMUN2233T1G, NSVMUN2237T1G, NSV40501UW3T2G, NSV60100DMTWTBG, 13009, NSV60200LT1G, NSV60201LT1G, NSV60600MZ4T1G, NSV60600MZ4T3G, NSV60601MZ4T1G, NSV60601MZ4T3G, NSV9435T1G, NSVBC817-16LT1G