NSS40600CF8T1G
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NSS40600CF8T1G
Código: VA
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 2.75
W
Tensión colector-base (Vcb): 40
V
Tensión colector-emisor (Vce): 40
V
Tensión emisor-base (Veb): 7
V
Corriente del colector DC máxima (Ic): 6
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 100
MHz
Capacitancia de salida (Cc): 150
pF
Ganancia de corriente contínua (hfe): 250
Paquete / Cubierta: DFN3X2
Búsqueda de reemplazo de transistor bipolar NSS40600CF8T1G
NSS40600CF8T1G
Datasheet (PDF)
..1. Size:103K onsemi
nss40600cf8t1g.pdf
NSS40600CF8T1G,SNSS40600CF8T1G40 V, 7.0 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat) http://onsemi.comtransistors are miniature surface mount devices featuring ultra low-40 VOLTS, 7.0 AMPSsaturation voltage (VCE(sat)) and high current gain capability. Theseare designed for use in low voltage, high speed switching applicationsPNP LOW VCE(
3.1. Size:128K onsemi
nss40600cf8-d.pdf
NSS40600CF8T1G40 V, 7.0 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesehttp://onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is impor
7.1. Size:88K onsemi
nss40601cf8-d.pdf
NSS40601CF8T1G40 V, 8.0 A, Low VCE(sat)NPN TransistorON Semiconductor's e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesehttp://onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is importa
7.2. Size:161K onsemi
nss40601cf8t1g.pdf
NSS40601CF8T1G40 V, 8.0 A, Low VCE(sat)NPN TransistorON Semiconductor's e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesehttp://onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is importa
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