All Transistors. NSS40600CF8T1G Datasheet

 

NSS40600CF8T1G Datasheet and Replacement


   Type Designator: NSS40600CF8T1G
   SMD Transistor Code: VA
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 2.75 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 40 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 6 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 150 pF
   Forward Current Transfer Ratio (hFE), MIN: 250
   Noise Figure, dB: -
   Package: DFN3X2
 

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NSS40600CF8T1G Datasheet (PDF)

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NSS40600CF8T1G

NSS40600CF8T1G,SNSS40600CF8T1G40 V, 7.0 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat) http://onsemi.comtransistors are miniature surface mount devices featuring ultra low-40 VOLTS, 7.0 AMPSsaturation voltage (VCE(sat)) and high current gain capability. Theseare designed for use in low voltage, high speed switching applicationsPNP LOW VCE(

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NSS40600CF8T1G

NSS40600CF8T1G40 V, 7.0 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesehttp://onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is impor

 7.1. Size:88K  onsemi
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NSS40600CF8T1G

NSS40601CF8T1G40 V, 8.0 A, Low VCE(sat)NPN TransistorON Semiconductor's e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesehttp://onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is importa

 7.2. Size:161K  onsemi
nss40601cf8t1g.pdf pdf_icon

NSS40600CF8T1G

NSS40601CF8T1G40 V, 8.0 A, Low VCE(sat)NPN TransistorON Semiconductor's e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesehttp://onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is importa

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SC4793 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

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