NSVBA114EDXV6T1G Todos los transistores

 

NSVBA114EDXV6T1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NSVBA114EDXV6T1G
   Código: 0A
   Material: Si
   Polaridad de transistor: Pre-Biased-PNP
   Resistencia de Entrada Base R1 = 10 kOhm
   Resistencia Base-Emisor R2 = 10 kOhm
   Ratio típica de resistencia R1/R2 = 1

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.36 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 35
   Paquete / Cubierta: SOT563

 Búsqueda de reemplazo de transistor bipolar NSVBA114EDXV6T1G

 

NSVBA114EDXV6T1G Datasheet (PDF)

 0.1. Size:89K  onsemi
nsvba114edxv6t1g.pdf

NSVBA114EDXV6T1G
NSVBA114EDXV6T1G

MUN5111DW1,NSBA114EDXV6,NSBA114EDP6Dual PNP Bias ResistorTransistorshttp://onsemi.comR1 = 10 kW, R2 = 10 kWPNP Transistors with Monolithic BiasPIN CONNECTIONSResistor Network(3) (2) (1)This series of digital transistors is designed to replace a singledevice and its external resistor bias network. The Bias ResistorR1 R2Transistor (BRT) contains a single transistor wit

 6.1. Size:128K  onsemi
nsvba114ydxv6t1g.pdf

NSVBA114EDXV6T1G
NSVBA114EDXV6T1G

MUN5114DW1,NSBA114YDXV6,NSBA114YDP6Dual PNP Bias ResistorTransistorshttp://onsemi.comR1 = 10 kW, R2 = 47 kWPIN CONNECTIONSPNP Transistors with Monolithic BiasResistor Network(3) (2) (1)This series of digital transistors is designed to replace a singleR1 R2device and its external resistor bias network. The Bias ResistorTransistor (BRT) contains a single transistor wit

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