NSVBA114EDXV6T1G Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NSVBA114EDXV6T1G

Código: 0A

Material: Si

Polaridad de transistor: Pre-Biased-PNP

Resistencia de Entrada Base R1 = 10 kOhm

Resistencia Base-Emisor R2 = 10 kOhm

Ratio típica de resistencia R1/R2 = 1

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.36 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 50 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 35

Encapsulados: SOT563

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NSVBA114EDXV6T1G datasheet

 0.1. Size:89K  onsemi
 nsvba114edxv6t1g.pdf pdf_icon

NSVBA114EDXV6T1G

MUN5111DW1, NSBA114EDXV6, NSBA114EDP6 Dual PNP Bias Resistor Transistors http //onsemi.com R1 = 10 kW, R2 = 10 kW PNP Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network (3) (2) (1) This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor R1 R2 Transistor (BRT) contains a single transistor wit

 6.1. Size:128K  onsemi
 nsvba114ydxv6t1g.pdf pdf_icon

NSVBA114EDXV6T1G

MUN5114DW1, NSBA114YDXV6, NSBA114YDP6 Dual PNP Bias Resistor Transistors http //onsemi.com R1 = 10 kW, R2 = 47 kW PIN CONNECTIONS PNP Transistors with Monolithic Bias Resistor Network (3) (2) (1) This series of digital transistors is designed to replace a single R1 R2 device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor wit

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