NSVBA114EDXV6T1G Specs and Replacement
Type Designator: NSVBA114EDXV6T1G
SMD Transistor Code: 0A
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 10 kOhm
Built in Bias Resistor R2 = 10 kOhm
Typical Resistor Ratio R1/R2 = 1
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.36 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 35
Package: SOT563
NSVBA114EDXV6T1G Substitution
- BJT ⓘ Cross-Reference Search
NSVBA114EDXV6T1G datasheet
MUN5111DW1, NSBA114EDXV6, NSBA114EDP6 Dual PNP Bias Resistor Transistors http //onsemi.com R1 = 10 kW, R2 = 10 kW PNP Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network (3) (2) (1) This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor R1 R2 Transistor (BRT) contains a single transistor wit... See More ⇒
MUN5114DW1, NSBA114YDXV6, NSBA114YDP6 Dual PNP Bias Resistor Transistors http //onsemi.com R1 = 10 kW, R2 = 47 kW PIN CONNECTIONS PNP Transistors with Monolithic Bias Resistor Network (3) (2) (1) This series of digital transistors is designed to replace a single R1 R2 device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor wit... See More ⇒
Detailed specifications: NSTB60BDW1T1G, NSVB114YPDXV6T1G, NSVB123JPDXV6T1G, NSVB124XPDXV6T1G, NSVB143TPDXV6T1G, NSVB143ZPDXV6T1G, NSVB144EPDXV6T1G, NSVB1706DMW5T1G, BC639, NSVBA114YDXV6T1G, NSVBC114EDXV6T1G, NSVBC114EPDXV6T1G, NSVBC114YDXV6T1G, NSVBC124EDXV6T1G, NSV2SA2029M3T5G, NSV2SC5658M3T5G, NSV40200LT1G
Keywords - NSVBA114EDXV6T1G pdf specs
NSVBA114EDXV6T1G cross reference
NSVBA114EDXV6T1G equivalent finder
NSVBA114EDXV6T1G pdf lookup
NSVBA114EDXV6T1G substitution
NSVBA114EDXV6T1G replacement
