NSVBC124EDXV6T1G Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NSVBC124EDXV6T1G

Código: 7B

Material: Si

Polaridad de transistor: Pre-Biased-NPN

Resistencia de Entrada Base R1 = 22 kOhm

Resistencia Base-Emisor R2 = 22 kOhm

Ratio típica de resistencia R1/R2 = 1

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.36 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 50 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 60

Encapsulados: SOT563

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NSVBC124EDXV6T1G datasheet

 0.1. Size:146K  onsemi
 nsvbc124edxv6t1g.pdf pdf_icon

NSVBC124EDXV6T1G

MUN5212DW1, NSBC124EDXV6, NSBC124EDP6 Dual NPN Bias Resistor Transistors http //onsemi.com R1 = 22 kW, R2 = 22 kW PIN CONNECTIONS NPN Transistors with Monolithic Bias Resistor Network (3) (2) (1) This series of digital transistors is designed to replace a single R1 R2 device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor wit

 8.1. Size:89K  onsemi
 nsvbc114edxv6t1g.pdf pdf_icon

NSVBC124EDXV6T1G

MUN5211DW1, NSBC114EDXV6, NSBC114EDP6 Dual NPN Bias Resistor Transistors http //onsemi.com R1 = 10 kW, R2 = 10 kW NPN Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network (3) (2) (1) This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor R1 R2 Transistor (BRT) contains a single transistor wit

 8.2. Size:165K  onsemi
 nsvbc114ydxv6t1g.pdf pdf_icon

NSVBC124EDXV6T1G

NSBC114EPDXV6T1G, NSVBC114EPDXV6T1G Series Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias http //onsemi.com Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. These digital transistors are SOT-

 8.3. Size:101K  onsemi
 nsvbc114epdxv6t1g.pdf pdf_icon

NSVBC124EDXV6T1G

MUN5311DW1, NSBC114EPDXV6, NSBC114EPDP6 Complementary Bias Resistor Transistors http //onsemi.com R1 = 10 kW, R2 = 10 kW NPN and PNP Transistors with Monolithic PIN CONNECTIONS Bias Resistor Network (3) (2) (1) This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor R1 R2 Transistor (BRT) contains a single

MOSTRAR MÁS

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