All Transistors. NSVBC124EDXV6T1G Datasheet

 

NSVBC124EDXV6T1G Datasheet and Replacement


   Type Designator: NSVBC124EDXV6T1G
   SMD Transistor Code: 7B
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 22 kOhm
   Built in Bias Resistor R2 = 22 kOhm
   Typical Resistor Ratio R1/R2 = 1
   Maximum Collector Power Dissipation (Pc): 0.36 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
   Package: SOT563
 

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NSVBC124EDXV6T1G Datasheet (PDF)

 0.1. Size:146K  onsemi
 nsvbc124edxv6t1g.pdf pdf_icon

NSVBC124EDXV6T1G

MUN5212DW1,NSBC124EDXV6,NSBC124EDP6Dual NPN Bias ResistorTransistorshttp://onsemi.comR1 = 22 kW, R2 = 22 kWPIN CONNECTIONSNPN Transistors with Monolithic BiasResistor Network(3) (2) (1)This series of digital transistors is designed to replace a singleR1 R2device and its external resistor bias network. The Bias ResistorTransistor (BRT) contains a single transistor wit

 8.1. Size:89K  onsemi
 nsvbc114edxv6t1g.pdf pdf_icon

NSVBC124EDXV6T1G

MUN5211DW1,NSBC114EDXV6,NSBC114EDP6Dual NPN Bias ResistorTransistorshttp://onsemi.comR1 = 10 kW, R2 = 10 kWNPN Transistors with Monolithic BiasPIN CONNECTIONSResistor Network(3) (2) (1)This series of digital transistors is designed to replace a singledevice and its external resistor bias network. The Bias ResistorR1 R2Transistor (BRT) contains a single transistor wit

 8.2. Size:165K  onsemi
 nsvbc114ydxv6t1g.pdf pdf_icon

NSVBC124EDXV6T1G

NSBC114EPDXV6T1G,NSVBC114EPDXV6T1G SeriesDual Bias ResistorTransistorsNPN and PNP Silicon Surface MountTransistors with Monolithic Biashttp://onsemi.comResistor NetworkThe BRT (Bias Resistor Transistor) contains a single transistor witha monolithic bias network consisting of two resistors; a series baseresistor and a base-emitter resistor. These digital transistors areSOT-

 8.3. Size:101K  onsemi
 nsvbc114epdxv6t1g.pdf pdf_icon

NSVBC124EDXV6T1G

MUN5311DW1,NSBC114EPDXV6,NSBC114EPDP6Complementary BiasResistor Transistorshttp://onsemi.comR1 = 10 kW, R2 = 10 kWNPN and PNP Transistors with MonolithicPIN CONNECTIONSBias Resistor Network(3) (2) (1)This series of digital transistors is designed to replace a singledevice and its external resistor bias network. The Bias ResistorR1 R2Transistor (BRT) contains a single

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Datasheet: NSVB143ZPDXV6T1G , NSVB144EPDXV6T1G , NSVB1706DMW5T1G , NSVBA114EDXV6T1G , NSVBA114YDXV6T1G , NSVBC114EDXV6T1G , NSVBC114EPDXV6T1G , NSVBC114YDXV6T1G , 2SC2482 , NSV2SA2029M3T5G , NSV2SC5658M3T5G , NSV40200LT1G , NSV40200UW6T1G , NSV40201LT1G , NSV40300MDR2G , NSV40300MZ4T1G , NSV40301MDR2G .

History: 2SC637 | PBF259R | 2SD960 | MRF3866R2 | 2SC3446L | PBF493R | BUW22A

Keywords - NSVBC124EDXV6T1G transistor datasheet

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