NSVBC124EDXV6T1G. Аналоги и основные параметры

Наименование производителя: NSVBC124EDXV6T1G

Маркировка: 7B

Тип материала: Si

Полярность: Pre-Biased-NPN

Встроенный резистор цепи смещения R1 = 22 kOhm

Встроенный резистор цепи смещения R2 = 22 kOhm

Соотношение сопротивлений R1/R2 = 1

Предельные значения

Максимальная рассеиваемая мощность (Pc): 0.36 W

Макcимально допустимое напряжение коллектор-база (Ucb): 50 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V

Макcимальный постоянный ток коллектора (Ic): 0.1 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Статический коэффициент передачи тока (hFE): 60

Корпус транзистора: SOT563

 Аналоги (замена) для NSVBC124EDXV6T1G

- подборⓘ биполярного транзистора по параметрам

 

NSVBC124EDXV6T1G даташит

 0.1. Size:146K  onsemi
 nsvbc124edxv6t1g.pdf pdf_icon

NSVBC124EDXV6T1G

MUN5212DW1, NSBC124EDXV6, NSBC124EDP6 Dual NPN Bias Resistor Transistors http //onsemi.com R1 = 22 kW, R2 = 22 kW PIN CONNECTIONS NPN Transistors with Monolithic Bias Resistor Network (3) (2) (1) This series of digital transistors is designed to replace a single R1 R2 device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor wit

 8.1. Size:89K  onsemi
 nsvbc114edxv6t1g.pdf pdf_icon

NSVBC124EDXV6T1G

MUN5211DW1, NSBC114EDXV6, NSBC114EDP6 Dual NPN Bias Resistor Transistors http //onsemi.com R1 = 10 kW, R2 = 10 kW NPN Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network (3) (2) (1) This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor R1 R2 Transistor (BRT) contains a single transistor wit

 8.2. Size:165K  onsemi
 nsvbc114ydxv6t1g.pdf pdf_icon

NSVBC124EDXV6T1G

NSBC114EPDXV6T1G, NSVBC114EPDXV6T1G Series Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias http //onsemi.com Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. These digital transistors are SOT-

 8.3. Size:101K  onsemi
 nsvbc114epdxv6t1g.pdf pdf_icon

NSVBC124EDXV6T1G

MUN5311DW1, NSBC114EPDXV6, NSBC114EPDP6 Complementary Bias Resistor Transistors http //onsemi.com R1 = 10 kW, R2 = 10 kW NPN and PNP Transistors with Monolithic PIN CONNECTIONS Bias Resistor Network (3) (2) (1) This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor R1 R2 Transistor (BRT) contains a single

ПОКАЗАТЬ ЕЩЁ

Другие транзисторы: NSVB143ZPDXV6T1G, NSVB144EPDXV6T1G, NSVB1706DMW5T1G, NSVBA114EDXV6T1G, NSVBA114YDXV6T1G, NSVBC114EDXV6T1G, NSVBC114EPDXV6T1G, NSVBC114YDXV6T1G, 2N2907, NSV2SA2029M3T5G, NSV2SC5658M3T5G, NSV40200LT1G, NSV40200UW6T1G, NSV40201LT1G, NSV40300MDR2G, NSV40300MZ4T1G, NSV40301MDR2G