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NSV2SC5658M3T5G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NSV2SC5658M3T5G
   Código: B9
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.26 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 7 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 180 MHz
   Capacitancia de salida (Cc): 2 pF
   Ganancia de corriente contínua (hfe): 120
   Paquete / Cubierta: SOT723
 

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NSV2SC5658M3T5G Datasheet (PDF)

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 nsv2sc5658m3t5g.pdf pdf_icon

NSV2SC5658M3T5G

2SC5658M3T5G,2SC5658RM3T5GNPN Silicon GeneralPurpose Amplifier TransistorThis NPN transistor is designed for general purpose amplifierapplications. This device is housed in the SOT-723 package which ishttp://onsemi.comdesigned for low power surface mount applications, where boardspace is at a premium.NPN GENERALFeaturesPURPOSE AMPLIFIER Reduces Board SpaceTRANSISTOR

 9.1. Size:97K  onsemi
 nsv2sa2029m3t5g.pdf pdf_icon

NSV2SC5658M3T5G

2SA2029M3T5GPNP Silicon GeneralPurpose Amplifier TransistorThis PNP transistor is designed for general purpose amplifierapplications. This device is housed in the SOT-723 package which isdesigned for low power surface mount applications, where boardhttp://onsemi.comspace is at a premium.FeaturesPNP GENERAL Reduces Board SpacePURPOSE AMPLIFIER High hFE, 210-460 (Typ

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History: 2PB709AS | 2SD1831 | 2SA1728 | MRF902 | CMJ10004 | D32H4

 

 
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