NSV2SC5658M3T5G Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NSV2SC5658M3T5G

Código: B9

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.26 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 7 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 180 MHz

Capacitancia de salida (Cc): 2 pF

Ganancia de corriente contínua (hFE): 120

Encapsulados: SOT723

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NSV2SC5658M3T5G datasheet

 0.1. Size:98K  onsemi
 nsv2sc5658m3t5g.pdf pdf_icon

NSV2SC5658M3T5G

2SC5658M3T5G, 2SC5658RM3T5G NPN Silicon General Purpose Amplifier Transistor This NPN transistor is designed for general purpose amplifier applications. This device is housed in the SOT-723 package which is http //onsemi.com designed for low power surface mount applications, where board space is at a premium. NPN GENERAL Features PURPOSE AMPLIFIER Reduces Board Space TRANSISTOR

 9.1. Size:97K  onsemi
 nsv2sa2029m3t5g.pdf pdf_icon

NSV2SC5658M3T5G

2SA2029M3T5G PNP Silicon General Purpose Amplifier Transistor This PNP transistor is designed for general purpose amplifier applications. This device is housed in the SOT-723 package which is designed for low power surface mount applications, where board http //onsemi.com space is at a premium. Features PNP GENERAL Reduces Board Space PURPOSE AMPLIFIER High hFE, 210-460 (Typ

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