All Transistors. NSV2SC5658M3T5G Datasheet

 

NSV2SC5658M3T5G Datasheet and Replacement


   Type Designator: NSV2SC5658M3T5G
   SMD Transistor Code: B9
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.26 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 180 MHz
   Collector Capacitance (Cc): 2 pF
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: SOT723
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NSV2SC5658M3T5G Datasheet (PDF)

 0.1. Size:98K  onsemi
 nsv2sc5658m3t5g.pdf pdf_icon

NSV2SC5658M3T5G

2SC5658M3T5G,2SC5658RM3T5GNPN Silicon GeneralPurpose Amplifier TransistorThis NPN transistor is designed for general purpose amplifierapplications. This device is housed in the SOT-723 package which ishttp://onsemi.comdesigned for low power surface mount applications, where boardspace is at a premium.NPN GENERALFeaturesPURPOSE AMPLIFIER Reduces Board SpaceTRANSISTOR

 9.1. Size:97K  onsemi
 nsv2sa2029m3t5g.pdf pdf_icon

NSV2SC5658M3T5G

2SA2029M3T5GPNP Silicon GeneralPurpose Amplifier TransistorThis PNP transistor is designed for general purpose amplifierapplications. This device is housed in the SOT-723 package which isdesigned for low power surface mount applications, where boardhttp://onsemi.comspace is at a premium.FeaturesPNP GENERAL Reduces Board SpacePURPOSE AMPLIFIER High hFE, 210-460 (Typ

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: RN1909 | 2SC4154 | BD633 | GI3704 | NSBC114EDXV6T1G | NTE2547 | KRA354

Keywords - NSV2SC5658M3T5G transistor datasheet

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