NSV2SC5658M3T5G Specs and Replacement

Type Designator: NSV2SC5658M3T5G

SMD Transistor Code: B9

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.26 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 180 MHz

Collector Capacitance (Cc): 2 pF

Forward Current Transfer Ratio (hFE), MIN: 120

Noise Figure, dB: -

Package: SOT723

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NSV2SC5658M3T5G datasheet

 0.1. Size:98K  onsemi

 nsv2sc5658m3t5g.pdf pdf_icon

NSV2SC5658M3T5G

2SC5658M3T5G, 2SC5658RM3T5G NPN Silicon General Purpose Amplifier Transistor This NPN transistor is designed for general purpose amplifier applications. This device is housed in the SOT-723 package which is http //onsemi.com designed for low power surface mount applications, where board space is at a premium. NPN GENERAL Features PURPOSE AMPLIFIER Reduces Board Space TRANSISTOR... See More ⇒

 9.1. Size:97K  onsemi

 nsv2sa2029m3t5g.pdf pdf_icon

NSV2SC5658M3T5G

2SA2029M3T5G PNP Silicon General Purpose Amplifier Transistor This PNP transistor is designed for general purpose amplifier applications. This device is housed in the SOT-723 package which is designed for low power surface mount applications, where board http //onsemi.com space is at a premium. Features PNP GENERAL Reduces Board Space PURPOSE AMPLIFIER High hFE, 210-460 (Typ... See More ⇒

Detailed specifications: NSVB1706DMW5T1G, NSVBA114EDXV6T1G, NSVBA114YDXV6T1G, NSVBC114EDXV6T1G, NSVBC114EPDXV6T1G, NSVBC114YDXV6T1G, NSVBC124EDXV6T1G, NSV2SA2029M3T5G, 2SC828, NSV40200LT1G, NSV40200UW6T1G, NSV40201LT1G, NSV40300MDR2G, NSV40300MZ4T1G, NSV40301MDR2G, NSV40301MZ4T1G, NSV40302PDR2G

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