A1023 Todos los transistores

A1023 PNP silicon APPLICATION High Voltage Applications. MAXIMUM RATINGS Ta 25 PARAMETER SYMBOL RATING UNIT Collector-base voltage VCBO -120 V Collector-emitter voltage VCEO -120 V TO-92L 1 Emitter-base voltage VEBO -5 V 1. Emitter 2. Collector 3. Base Collector current IC -800 mA Collector Power Dissipation PC 1W Junctio

May 2009 FDMA1023PZ tm Dual P-Channel PowerTrench MOSFET 20V, 3.7A, 72m Features General Description Max rDS(on) = 72m at VGS = 4.5V, ID = 3.7A This device is designed specifically as a single package solution for the battery charge switch in cellular handset Max rDS(on) = 95m at VGS = 2.5V, ID = 3.2A and other ultra-portable applications. It features

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors J C T TO-92L KTA1023 TRANSISTOR (PNP) 1. EMITTER FEATURES Complementary to KTC1027 2. COLLECTER 3. BASE MAXIMUM RATINGS (TaB=25 unless otherwise noted) Symbol Parameter Value Unit VB B Collector-Base Voltage -120 V CBO VB B Collector-Emitter Voltage -120 V CEO VB B Emitte

SEMICONDUCTOR KTA1023 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH VOLTAGE APPLICATION. B D FEATURE Complementary to KTC1027. DIM MILLIMETERS P DEPTH 0.2 A 7.20 MAX B 5.20 MAX C C 0.60 MAX S MAXIMUM RATING (Ta=25 ) D 2.50 MAX Q E 1.15 MAX K CHARACTERISTIC SYMBOL RATING UNIT F 1.27 G 1.70 MAX VCBO -120 V Collector-Base Voltage H 0.55 MAX FF _ J 14.00 + 0.50 K

KTA1023 TO-92L Transistor (PNP) TO-92L 1. EMITTER 2. COLLECTER 3. BASE 2 3 4.700 1 5.100 Features Complementary to KTC1027 7.800 8.200 MAXIMUM RATINGS (TB B=25 unless otherwise noted) A 0.600 0.800 Symbol Parameter Value Units VB B Collector-Base Voltage -120 V CBO 0.350 0.550 VB B Collector-Emitter Voltage -120 V CEO 13.800 14.200 VB B Emitter-Base Vo

KTA1023 WEITRON PNP Transistor P b Lead(Pb)-Free 1. EMITTER 2. COLLECTOR 3. BASE TO-92L MAXIMUM RATINGS (TA=25 unless otherwise noted) value Parameter Symbol Units Collector-Base Voltage VCBO -120 V -120 V Collector-Emitter Voltage VCEO -5 V Emitter-Base Voltage VEBO -0.8 A Collector Current -Continuous IC Collector Power Dissipation PC 0.9 W Junction Temperature TJ 150

SEMICONDUCTOR FTA1023 TECHNICAL DATA FTA1023 TRANSISTOR (PNP) B FEATURES Complementary to FTC1027 E DIM MILLIMETERS A 8.2 MAX D B 5.1 MAX C 1.58 MAX D 0.55 MAX MAXIMUM RATINGS (TaB=25 unless otherwise noted) E 0.7 TYP F 1.27 TYP G 2.54 TYP Symbol Parameter Value Unit F H 14.20 MAX G J 0.45 MAX VCBOB Collector-Base Voltage -120 V L 4.10 MAX VCEOB Collector-Emitte