Биполярный транзистор A1023 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: A1023
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 1 W
Макcимально допустимое напряжение коллектор-база (Ucb): 120 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 120 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 0.8 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 120 MHz
Ёмкость коллекторного перехода (Cc): 40 pf
Статический коэффициент передачи тока (hfe): 80
Корпус транзистора: TO92L
A1023 Datasheet (PDF)
a1023.pdf
A1023 PNP silicon APPLICATION: High Voltage Applications.MAXIMUM RATINGSTa25PARAMETER SYMBOL RATING UNITCollector-base voltageVCBO -120 VCollector-emitter voltageVCEO -120 VTO-92L1Emitter-base voltage VEBO -5 V1. Emitter 2. Collector 3. BaseCollector currentIC -800 mACollector Power DissipationPC 1WJunctio
fdma1023pz.pdf
May 2009FDMA1023PZtmDual P-Channel PowerTrench MOSFET20V, 3.7A, 72mFeatures General Description Max rDS(on) = 72m at VGS = 4.5V, ID = 3.7AThis device is designed specifically as a single package solution for the battery charge switch in cellular handset Max rDS(on) = 95m at VGS = 2.5V, ID = 3.2Aand other ultra-portable applications. It features
kta1023.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors J C T TO-92L KTA1023 TRANSISTOR (PNP) 1. EMITTER FEATURES Complementary to KTC1027 2. COLLECTER 3. BASE MAXIMUM RATINGS (TaB=25 unless otherwise noted) Symbol Parameter Value UnitVB B Collector-Base Voltage -120 V CBOVB B Collector-Emitter Voltage -120 V CEOVB B Emitte
kta1023.pdf
SEMICONDUCTOR KTA1023TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORHIGH VOLTAGE APPLICATION.B DFEATURE Complementary to KTC1027. DIM MILLIMETERSPDEPTH:0.2A 7.20 MAXB 5.20 MAXCC 0.60 MAXSMAXIMUM RATING (Ta=25 )D 2.50 MAXQE 1.15 MAXKCHARACTERISTIC SYMBOL RATING UNITF 1.27G 1.70 MAXVCBO -120 VCollector-Base Voltage H 0.55 MAXFF_J 14.00 + 0.50K
kta1023 to-92l.pdf
KTA1023 TO-92L Transistor (PNP)TO-92L1. EMITTER 2. COLLECTER 3. BASE 2 3 4.7001 5.100Features Complementary to KTC1027 7.8008.200MAXIMUM RATINGS (TB B=25 unless otherwise noted) A0.6000.800Symbol Parameter Value UnitsVB B Collector-Base Voltage -120 V CBO0.3500.550VB B Collector-Emitter Voltage -120 V CEO13.80014.200VB B Emitter-Base Vo
kta1023.pdf
KTA1023WEITRONPNP TransistorP b Lead(Pb)-Free1. EMITTER2. COLLECTOR3. BASETO-92LMAXIMUM RATINGS (TA=25 unless otherwise noted)valueParameter Symbol UnitsCollector-Base Voltage VCBO -120 V-120 VCollector-Emitter Voltage VCEO-5 VEmitter-Base Voltage VEBO-0.8 ACollector Current -Continuous ICCollector Power Dissipation PC 0.9 WJunction Temperature TJ 150
kta1023.pdf
KTA1023 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92LM PNP Silicon PNP transistor in a TO-92LM Plastic Package. / Features KTC1027 Complementary pair with KTC1027. / Applications ,High voltage application. / Equivalent Circuit / Pinning 1 2 3 PIN1
fta1023.pdf
SEMICONDUCTORFTA1023TECHNICAL DATAFTA1023 TRANSISTOR (PNP) BFEATURES Complementary to FTC1027 EDIM MILLIMETERSA 8.2 MAXDB 5.1 MAXC 1.58 MAXD 0.55 MAXMAXIMUM RATINGS (TaB=25 unless otherwise noted) E 0.7 TYPF 1.27 TYPG 2.54 TYPSymbol Parameter Value UnitFH 14.20 MAX GJ 0.45 MAX VCBOB Collector-Base Voltage -120 V L 4.10 MAX VCEOB Collector-Emitte
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050