A539 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

A539 PNP silicon APPLICATIONAMPLIFIER APPLICATIONSWITCH APPLICATION.MAXIMUM RATINGSTa25PARAMETER SYMBOL RATING UNITCollector-base voltage VCBO -60 VCollector-emitter voltage VCEO -45 VEmitter-base voltage VEBO -5 VCollector current IC -200 mACollector Power Dissipation PC 400 mWJunction Temperature TJ 150Storage

KSA539Low Frequency Amplifier Complement to KSC815 Collector-Base Voltage: VCBO = -60V Collector Power Dissipation: PC = 400mW Suffix -C means Center Collector (1. Emitter 2. Collector 3. Base)TO-9211. Emitter 2. Base 3. CollectorPNP Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVCBO C

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPNP SILICON PLANAR EPITAXIAL TRANSISTOR CSA539TO-92Plastic PackageComplementary CSC815Low Frequency AmplifierABSOLUTE MAXIMUM RATINGS (Ta=25C )DESCRIPTION SYMBOL VALUE UNITVCBOCollector Base Voltage 60 VVCEOCollector Emitter Voltage 45 VVEBOEmitter Base Voltage 5VICCollecto

SEMICONDUCTOR KTA539TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORLOW FREQUENCY AMPLIFIERB CFEATURESCollector-Base Voltage : VCBO=-60V.Complementary to KTC815.DIM MILLIMETERSN A 4.70 MAXB 4.80 MAXEKG C 3.70 MAXD 0.45DE 1.00F 1.27G 0.85H 0.45MAXIMUM RATING (Ta=25 )_J 14.00 + 0.50HK 0.55 MAXCHARACTERISTIC SYMBOL RATING UNITF F L 2.30M 0.45 MAX