A539
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: A539
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.4
W
Tensión colector-base (Vcb): 60
V
Tensión colector-emisor (Vce): 45
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 0.2
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 40
Paquete / Cubierta:
TO92
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A539
Datasheet (PDF)
..1. Size:489K china
a539.pdf
A539 PNP silicon APPLICATIONAMPLIFIER APPLICATIONSWITCH APPLICATION.MAXIMUM RATINGSTa25PARAMETER SYMBOL RATING UNITCollector-base voltage VCBO -60 VCollector-emitter voltage VCEO -45 VEmitter-base voltage VEBO -5 VCollector current IC -200 mACollector Power Dissipation PC 400 mWJunction Temperature TJ 150Storage
0.1. Size:37K fairchild semi
ksa539.pdf
KSA539Low Frequency Amplifier Complement to KSC815 Collector-Base Voltage: VCBO = -60V Collector Power Dissipation: PC = 400mW Suffix -C means Center Collector (1. Emitter 2. Collector 3. Base)TO-9211. Emitter 2. Base 3. CollectorPNP Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVCBO C
0.2. Size:202K cdil
csa539.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPNP SILICON PLANAR EPITAXIAL TRANSISTOR CSA539TO-92Plastic PackageComplementary CSC815Low Frequency AmplifierABSOLUTE MAXIMUM RATINGS (Ta=25C )DESCRIPTION SYMBOL VALUE UNITVCBOCollector Base Voltage 60 VVCEOCollector Emitter Voltage 45 VVEBOEmitter Base Voltage 5VICCollecto
0.3. Size:73K kec
kta539.pdf
SEMICONDUCTOR KTA539TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORLOW FREQUENCY AMPLIFIERB CFEATURESCollector-Base Voltage : VCBO=-60V.Complementary to KTC815.DIM MILLIMETERSN A 4.70 MAXB 4.80 MAXEKG C 3.70 MAXD 0.45DE 1.00F 1.27G 0.85H 0.45MAXIMUM RATING (Ta=25 )_J 14.00 + 0.50HK 0.55 MAXCHARACTERISTIC SYMBOL RATING UNITF F L 2.30M 0.45 MAX
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