A539 - описание и поиск аналогов

A539 PNP silicon APPLICATION AMPLIFIER APPLICATIONSWITCH APPLICATION. MAXIMUM RATINGS Ta 25 PARAMETER SYMBOL RATING UNIT Collector-base voltage VCBO -60 V Collector-emitter voltage VCEO -45 V Emitter-base voltage VEBO -5 V Collector current IC -200 mA Collector Power Dissipation PC 400 mW Junction Temperature TJ 150 Storage

KSA539 Low Frequency Amplifier Complement to KSC815 Collector-Base Voltage VCBO = -60V Collector Power Dissipation PC = 400mW Suffix -C means Center Collector (1. Emitter 2. Collector 3. Base) TO-92 1 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Ratings Units VCBO C

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTOR CSA539 TO-92 Plastic Package Complementary CSC815 Low Frequency Amplifier ABSOLUTE MAXIMUM RATINGS (Ta=25 C ) DESCRIPTION SYMBOL VALUE UNIT VCBO Collector Base Voltage 60 V VCEO Collector Emitter Voltage 45 V VEBO Emitter Base Voltage 5V IC Collecto

SEMICONDUCTOR KTA539 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR LOW FREQUENCY AMPLIFIER B C FEATURES Collector-Base Voltage VCBO=-60V. Complementary to KTC815. DIM MILLIMETERS N A 4.70 MAX B 4.80 MAX E K G C 3.70 MAX D 0.45 D E 1.00 F 1.27 G 0.85 H 0.45 MAXIMUM RATING (Ta=25 ) _ J 14.00 + 0.50 H K 0.55 MAX CHARACTERISTIC SYMBOL RATING UNIT F F L 2.30 M 0.45 MAX