A614 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: A614
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 25 W
   Tensión colector-base (Vcb): 80 V
   Tensión colector-emisor (Vce): 55 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 3 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hfe): 40
Paquete / Cubierta: TO220

Búsqueda de reemplazo de transistor bipolar A614

A614 Datasheet (PDF)

..1. Size:471K china
a614.pdf

A614PNP silicon APPLICATIONLow Frequency Power Amplifier. Power RegulatorMAXIMUM RATINGSTa25PARAMETER SYMBOL RATING UNITCollector-base voltage VVCBO -80Collector-emitter voltage VCEO -55 VTO-2201Emitter-base voltage VEBO -5 V1.Base 2.Collector 3.EmitterCollector current IC -3.0 ACollector Power Dissipation

0.1. Size:43K fairchild semi
ksa614.pdf

KSA614Low Frequency Power AmplifierPower Regulator Collector-Base Voltage : VCBO= -80V Collector Dissipation : PC=25W (TC=25C)TO-22011.Base 2.Collector 3.EmitterPNP Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Ratings UnitsVCBO Collector- Base Voltage - 80 VVCEO Collector- Emitter Voltage - 55 VVEBO Emitt

0.2. Size:133K cdil
csa614 r o y csd288.pdf

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyTO-220 Plastic Package CSA614, CSD288CSA614 PNP PLASTIC POWER TRANSISTORCSD288 NPN PLASTIC POWER TRANSISTORLow frequency Power Amplifier and Power RegulatorPIN CONFIGURATION41. BASE2. COLLECTOR3. EMITTER4. COLLECTOR123CDIM MIN. MAX.B EFA 14.42 16.51B 9.63 10.67C 3.5

0.3. Size:168K lge
ksa614f.pdf

KSA614F(PNP) TO-220F Bipolar TransistorsTO-220F1. BASE 2. COLLECTOR 3. EMITTE 1 2 3Features Low Frequency Amplifier Medium Speed Switching Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -80 VVCEO Collector-Emitter Voltage -55 V VEBO Emitter-Base Voltage -5 V IC

0.4. Size:114K inchange semiconductor
ksa614.pdf

Inchange Semiconductor Product Specification Silicon PNP Power Transistors KSA614 DESCRIPTION With TO-220 package Collector-Base Voltage:VCBO=-80V(Min) Collector dissipation:PC=25W@TC=25 APPLICATIONS Low frequency power amplifier Power regulator PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings (Ta

0.5. Size:217K inchange semiconductor
2sa614.pdf

isc Silicon PNP Power Transistor 2SA614DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -55V (Min.)(BR)CEOCollector-Emitter Saturation Voltage-: V = -0.5V (Max.)@ I = -1ACE(sat) CCollector Power Dissipation-: P = 25W@ T = 25C CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for medium power amplif

Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , BC327 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: 2SA205

Liste

Recientemente añadidas las descripciónes de los transistores:

BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050