A1150 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: A1150  📄📄 

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.3 W

Tensión colector-base (Vcb): 40 V

Tensión colector-emisor (Vce): 20 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 40

Encapsulados: TO92

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A1150 datasheet

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 a1150.pdf pdf_icon

A1150

A1150 PNP silicon APPLICATION Low Frequency Amplifier Applications. MAXIMUM RATINGS Ta 25 PARAMETER SYMBOL RATING UNIT Collector-base voltage VCBO -40 V Collector-emitter voltage VCEO -20 V Emitter-base voltage VEBO -5 V Collector current IC -500 mA Collector Power Dissipation PC 300 mW Junction Temperature TJ 150 Storage Te

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 2sa1150.pdf pdf_icon

A1150

2SA1150 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1150 Low Frequency Amplifier Applications Unit mm High hFE h = 100 320 FE Complementary to 2SC2710. Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO -35 V Collector-emitter voltage VCEO -30 V Emitter-base voltage VEBO -5 V Collector current I

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 ksa1150.pdf pdf_icon

A1150

KSA1150 Low Frequency Power Amplifier Collector Dissipation PC = 300mW Complement to KSC2710 TO-92S 1 1.Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -20 V VEBO Emitter-Base Voltage -5 V IC Collector Curr

Otros transistores... A562, A564, A608, A608N, A614, A673, A684, A695, 9014, A1160, A1162, A1163, A1175, A1182, A1213, A1241, A1246