A1150 Todos los transistores

A1150 PNP silicon APPLICATION Low Frequency Amplifier Applications. MAXIMUM RATINGS Ta 25 PARAMETER SYMBOL RATING UNIT Collector-base voltage VCBO -40 V Collector-emitter voltage VCEO -20 V Emitter-base voltage VEBO -5 V Collector current IC -500 mA Collector Power Dissipation PC 300 mW Junction Temperature TJ 150 Storage Te

2SA1150 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1150 Low Frequency Amplifier Applications Unit mm High hFE h = 100 320 FE Complementary to 2SC2710. Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO -35 V Collector-emitter voltage VCEO -30 V Emitter-base voltage VEBO -5 V Collector current I

KSA1150 Low Frequency Power Amplifier Collector Dissipation PC = 300mW Complement to KSC2710 TO-92S 1 1.Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -20 V VEBO Emitter-Base Voltage -5 V IC Collector Curr