All Transistors. A1150 Datasheet

 

A1150 Datasheet and Replacement


   Type Designator: A1150
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.3 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 20 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO92
 

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A1150 Datasheet (PDF)

 ..1. Size:210K  fgx
 a1150.pdf pdf_icon

A1150

A1150 PNP silicon APPLICATIONLow Frequency Amplifier Applications.MAXIMUM RATINGSTa25PARAMETER SYMBOL RATING UNITCollector-base voltage VCBO -40 VCollector-emitter voltage VCEO -20 VEmitter-base voltage VEBO -5 VCollector current IC -500 mACollector Power Dissipation PC 300 mWJunction Temperature TJ 150Storage Te

 0.1. Size:193K  toshiba
 2sa1150.pdf pdf_icon

A1150

2SA1150 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1150 Low Frequency Amplifier Applications Unit: mm High hFE: h = 100~320 FE Complementary to 2SC2710. Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO -35 VCollector-emitter voltage VCEO -30 VEmitter-base voltage VEBO -5 VCollector current I

 0.2. Size:40K  fairchild semi
 ksa1150.pdf pdf_icon

A1150

KSA1150Low Frequency Power Amplifier Collector Dissipation : PC = 300mW Complement to KSC2710TO-92S11.Emitter 2. Collector 3. BasePNP Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVCBO Collector-Base Voltage -40 VVCEO Collector-Emitter Voltage -20 VVEBO Emitter-Base Voltage -5 VIC Collector Curr

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SC4793 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: DTB743EE | 92GE37A | 9400 | 2T9140 | TFN2444

Keywords - A1150 transistor datasheet

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