A1150 Datasheet, Equivalent, Cross Reference Search
Type Designator: A1150
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO92
A1150 Transistor Equivalent Substitute - Cross-Reference Search
A1150 Datasheet (PDF)
a1150.pdf
A1150 PNP silicon APPLICATIONLow Frequency Amplifier Applications.MAXIMUM RATINGSTa25PARAMETER SYMBOL RATING UNITCollector-base voltage VCBO -40 VCollector-emitter voltage VCEO -20 VEmitter-base voltage VEBO -5 VCollector current IC -500 mACollector Power Dissipation PC 300 mWJunction Temperature TJ 150Storage Te
2sa1150.pdf
2SA1150 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1150 Low Frequency Amplifier Applications Unit: mm High hFE: h = 100~320 FE Complementary to 2SC2710. Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO -35 VCollector-emitter voltage VCEO -30 VEmitter-base voltage VEBO -5 VCollector current I
ksa1150.pdf
KSA1150Low Frequency Power Amplifier Collector Dissipation : PC = 300mW Complement to KSC2710TO-92S11.Emitter 2. Collector 3. BasePNP Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVCBO Collector-Base Voltage -40 VVCEO Collector-Emitter Voltage -20 VVEBO Emitter-Base Voltage -5 VIC Collector Curr
Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
