A1163 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

A1163 PNP silicon APPLICATION:Audio Frequency General Purpose Amplifier Applications.MAXIMUM RATINGSTa25PARAMETER SYMBOL RATING UNITCollector-base voltage VCBO -120 VCollector-emitter voltage VCEO -120 VEmitter-base voltage VEBO -5 VCollector current IC -100 mA 1Collector Power Dissipation PC 150 mW2Junction Temperature TJ 150

2SA1163 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1163 Audio Frequency General Purpose Amplifier Applications Unit: mm High voltage: VCEO = -120 V Excellent hFE linearity: hFE (IC = -0.1 mA)/hFE (IC = -2 mA) = 0.95 (typ.) High hFE: hFE = 200~700 Low noise: NF = 1dB (typ.), 10dB (max) Complementary to 2SC2713 Small package Abs

2SA1163 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1163 Audio Frequency General Purpose Amplifier Applications Unit: mm AEC-Q101 Qualified (Note1). High voltage: V = -120 V CEO Excellent h linearity: h (I = -0.1 mA)/h (I = -2 mA) FE FE C FE C = 0.95 (typ.) High h h = 200 to 700 FE: FE Low noise: NF = 1 dB (typ.), 10 dB (max)

SMD Type TransistorsPNP Transistors2SA1163SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.1 Features3 High voltage: VCEO = -120 V High hFE: hFE = 200~700 Low noise: NF = 1dB (typ.), 10dB (max)1 2+0.1+0.050.95 -0.1 0.1 -0.01 Small package+0.11.9 -0.1 Complementary to 2SC27131.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25