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A1163 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: A1163
   Código: CG_CL
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.15 W
   Tensión colector-base (Vcb): 120 V
   Tensión colector-emisor (Vce): 120 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 100 MHz
   Capacitancia de salida (Cc): 4 pF
   Ganancia de corriente contínua (hfe): 200
   Paquete / Cubierta: SOT23

 Búsqueda de reemplazo de transistor bipolar A1163

 

A1163 Datasheet (PDF)

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 a1163.pdf

A1163

A1163 PNP silicon APPLICATION:Audio Frequency General Purpose Amplifier Applications.MAXIMUM RATINGSTa25PARAMETER SYMBOL RATING UNITCollector-base voltage VCBO -120 VCollector-emitter voltage VCEO -120 VEmitter-base voltage VEBO -5 VCollector current IC -100 mA 1Collector Power Dissipation PC 150 mW2Junction Temperature TJ 150

 0.1. Size:265K  toshiba
 2sa1163.pdf

A1163 A1163

2SA1163 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1163 Audio Frequency General Purpose Amplifier Applications Unit: mm High voltage: VCEO = -120 V Excellent hFE linearity: hFE (IC = -0.1 mA)/hFE (IC = -2 mA) = 0.95 (typ.) High hFE: hFE = 200~700 Low noise: NF = 1dB (typ.), 10dB (max) Complementary to 2SC2713 Small package Abs

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 2sa1163gr 2sa1163bl.pdf

A1163 A1163

2SA1163 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1163 Audio Frequency General Purpose Amplifier Applications Unit: mm AEC-Q101 Qualified (Note1). High voltage: V = -120 V CEO Excellent h linearity: h (I = -0.1 mA)/h (I = -2 mA) FE FE C FE C = 0.95 (typ.) High h h = 200 to 700 FE: FE Low noise: NF = 1 dB (typ.), 10 dB (max)

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 2sa1163.pdf

A1163 A1163

SMD Type TransistorsPNP Transistors2SA1163SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.1 Features3 High voltage: VCEO = -120 V High hFE: hFE = 200~700 Low noise: NF = 1dB (typ.), 10dB (max)1 2+0.1+0.050.95 -0.1 0.1 -0.01 Small package+0.11.9 -0.1 Complementary to 2SC27131.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: L2SC2412KSLT3G | 3CK301 | JE9133B | BCW17K | MUN5237T1G

 

 
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