A1163 pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

A1163 Specs and Replacement

Type Designator: A1163

SMD Transistor Code: CG_CL

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.15 W

Maximum Collector-Base Voltage |Vcb|: 120 V

Maximum Collector-Emitter Voltage |Vce|: 120 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 100 MHz

Collector Capacitance (Cc): 4 pF

Forward Current Transfer Ratio (hFE), MIN: 200

Noise Figure, dB: -

Package: SOT23

A1163 Substitution

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A1163 datasheet

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2SA1163 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1163 Audio Frequency General Purpose Amplifier Applications Unit mm High voltage VCEO = -120 V Excellent hFE linearity hFE (IC = -0.1 mA)/hFE (IC = -2 mA) = 0.95 (typ.) High hFE hFE = 200 700 Low noise NF = 1dB (typ.), 10dB (max) Complementary to 2SC2713 Small package Abs... See More ⇒

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2SA1163 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1163 Audio Frequency General Purpose Amplifier Applications Unit mm AEC-Q101 Qualified (Note1). High voltage V = -120 V CEO Excellent h linearity h (I = -0.1 mA)/h (I = -2 mA) FE FE C FE C = 0.95 (typ.) High h h = 200 to 700 FE FE Low noise NF = 1 dB (typ.), 10 dB (max) ... See More ⇒

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SMD Type Transistors PNP Transistors 2SA1163 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 Features 3 High voltage VCEO = -120 V High hFE hFE = 200 700 Low noise NF = 1dB (typ.), 10dB (max) 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 Small package +0.1 1.9 -0.1 Complementary to 2SC2713 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25... See More ⇒

Detailed specifications: A608N, A614, A673, A684, A695, A1150, A1160, A1162, 8050, A1175, A1182, A1213, A1241, A1246, A1255, A1266, A1267