A1175 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: A1175
Código: FR
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.25 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 180 MHz
Capacitancia de salida (Cc): 5 pF
Ganancia de corriente contínua (hfe): 110
Paquete / Cubierta: TO92S
Búsqueda de reemplazo de A1175
A1175 datasheet
a1175.pdf
A1175 PNP Silicon . APPLICATION For Driver Stage of AF Amplifier Applications. MAXIMUM RATINGS Ta=25 PARAMETER SYMBOL RATING UNIT VCBO -60 V Collector-base voltage VCEO -50 V Collector-emitter voltage VEBO -5 V Emitter-base voltage Ic -0.1 A Collector current Ib -0.02 A Base current Pc 0.25 Collector Power Dissipation W Tj 150 Juncti
ksa1175.pdf
KSA1175 Low Frequency Amplifier Collector-Base Voltage VCBO= -60V Complement to KSC2785 TO-92S 1 1.Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current -
ksa1175.pdf
KSA1175 TO-92S Transistor (PNP) TO-92S 1. EMITTER 2. COLLECTOR 3. BASE 1 2 3 Features Collector-Base Voltage VCBO= -60V Complement to KSC2785 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current (DC) -0.15 A Dim
Otros transistores... A614 , A673 , A684 , A695 , A1150 , A1160 , A1162 , A1163 , BC558 , A1182 , A1213 , A1241 , A1246 , A1255 , A1266 , A1267 , A1267S .
History: 2SB437 | CSC1213AB | BC112 | B772C | BC110 | CSC1213AC
History: 2SB437 | CSC1213AB | BC112 | B772C | BC110 | CSC1213AC
Liste
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