A1175 Datasheet, Equivalent, Cross Reference Search
Type Designator: A1175
SMD Transistor Code: FR
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.25 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 180 MHz
Collector Capacitance (Cc): 5 pF
Forward Current Transfer Ratio (hFE), MIN: 110
Noise Figure, dB: -
Package: TO92S
A1175 Transistor Equivalent Substitute - Cross-Reference Search
A1175 Datasheet (PDF)
a1175.pdf
A1175PNP Silicon.APPLICATIONFor Driver Stage of AF Amplifier Applications.MAXIMUM RATINGSTa=25PARAMETER SYMBOL RATING UNITVCBO -60 VCollector-base voltageVCEO -50 VCollector-emitter voltageVEBO -5 VEmitter-base voltage Ic -0.1 ACollector currentIb -0.02 ABase currentPc 0.25Collector Power Dissipation WTj 150Juncti
ksa1175.pdf
KSA1175Low Frequency Amplifier Collector-Base Voltage : VCBO= -60V Complement to KSC2785TO-92S11.Emitter 2. Collector 3. BasePNP Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVCBO Collector-Base Voltage -60 VVCEO Collector-Emitter Voltage -50 VVEBO Emitter-Base Voltage -5 VIC Collector Current -
ksa1175.pdf
KSA1175TO-92S Transistor (PNP)TO-92S 1. EMITTER 2. COLLECTOR 3. BASE 1 2 3 Features Collector-Base Voltage : VCBO= -60V Complement to KSC2785 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 VVEBO Emitter-Base Voltage -5 V IC Collector Current (DC) -0.15 A Dim
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
