A1296 Todos los transistores

A1296 PNP silicon APPLICATION Power Amplifier Application, Power Switching Application. MAXIMUM RATINGS Ta 25 PARAMETER SYMBOL RATING UNIT Collector-base voltage VCBO -20 V Collector-emitter voltage VCEO -20 V Emitter-base voltage VEBO -6 V Collector current IC -2 A Collector Power Dissipation PC 750 mW Junction Temperature TJ 15

2SA1296 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1296 Power Amplifier Applications Unit mm Power Switching Applications Low saturation voltage VCE (sat) = -0.5 V (max) @I = -2 A C Complementary to 2SC3266. Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO -20 V Collector-emitter voltage VCEO

2SA1296 -2 A, -20 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES Low Saturation Voltage VCE(sat) High DC Current Gain G H Emitter Collector Base J CLASSIFICATION OF hFE(1) A D Product-Rank 2SA1296-Y 2SA1296-GR Millimeter REF. B Min. Max.

SEMICONDUCTOR KTA1296 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR POWER AMPLIFIER APPLICATION. POWER SWITCHING APPLICATION. B C FEATURES Low Saturation Voltage. VCE(sat)=-0.5V(Max.) at IC=-2A N DIM MILLIMETERS Complementary to KTC3266. A 4.70 MAX E K B 4.80 MAX G C 3.70 MAX D D 0.45 E 1.00 F 1.27 G 0.85 MAXIMUM RATING (Ta=25 ) H 0.45 _ H J 14.00 + 0.50 CHARAC