A1296 PNP silicon APPLICATIONPower Amplifier Application, Power Switching Application.MAXIMUM RATINGSTa25PARAMETER SYMBOL RATING UNITCollector-base voltage VCBO -20 VCollector-emitter voltage VCEO -20 VEmitter-base voltage VEBO -6 VCollector current IC -2 ACollector Power Dissipation PC 750 mWJunction Temperature TJ 15

2SA1296 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1296 Power Amplifier Applications Unit: mm Power Switching Applications Low saturation voltage: VCE (sat) = -0.5 V (max) @I = -2 A C Complementary to 2SC3266. Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO -20 VCollector-emitter voltage VCEO

2SA1296 -2 A, -20 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES Low Saturation VoltageVCE(sat) High DC Current Gain G HEmitter Collector Base JCLASSIFICATION OF hFE(1) A DProduct-Rank 2SA1296-Y 2SA1296-GR MillimeterREF.B Min. Max.

SEMICONDUCTOR KTA1296TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORPOWER AMPLIFIER APPLICATION. POWER SWITCHING APPLICATION.B CFEATURES Low Saturation Voltage. : VCE(sat)=-0.5V(Max.) at IC=-2AN DIM MILLIMETERS Complementary to KTC3266. A 4.70 MAXEKB 4.80 MAXGC 3.70 MAXDD 0.45E 1.00F 1.27G 0.85MAXIMUM RATING (Ta=25 )H 0.45_HJ 14.00 + 0.50CHARAC